Characterization of thermal and trapping time constants in a GaN HEMT

Kevin Kellogg, Sourabh Khandelwal, Larry Dunleavy, Jing Wang

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

A commercial pulsed-IV system is used to test a GaN HEMT with the purpose of extracting exponential time constants used for dynamic electro-thermal and charge-carrier trapping models. The time constants of these different physical phenomena can not only vary by many orders of magnitude, but also have regions of overlap. Self-heating and trapping are common phenomena affecting GaN HEMTs, thus characterization and understanding these dynamics is critical for developing accurate compact models. We investigated the approach of recording the drain current transient response under a careful selection of the bias conditions, to approximately separate the two phenomena to derive useful estimate of the different associated time constants. Modeling of these time constants is of concern for modulated signal processing, where they fall within typical bandwidths of modern communication systems.

Original languageEnglish
Title of host publication2020 94th ARFTG Microwave Measurement Conference
Subtitle of host publicationRF to Millimeter-Wave Measurement Techniques for 5G and Beyond
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781728120560, 9781728120553
ISBN (Print)9781728120577
DOIs
Publication statusPublished - 2020
Externally publishedYes
Event94th ARFTG Microwave Measurement Conference: RF to Millimeter-Wave Measurement Techniques for 5G and Beyond, ARFTG 2020 - San Antonio, United States
Duration: 26 Jan 202029 Jan 2020

Conference

Conference94th ARFTG Microwave Measurement Conference: RF to Millimeter-Wave Measurement Techniques for 5G and Beyond, ARFTG 2020
CountryUnited States
CitySan Antonio
Period26/01/2029/01/20

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