Characterization of trapping and thermal dispersion in GaN HEMTs

Sayed A. Albahrani; Anthony E. Parker

doi:10.1109/MWSYM.2010.5515028

Characterization of trapping and thermal dispersion in GaN HEMTs

Sayed A. Albahrani, Anthony E. Parker

Faculty of Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminalpotential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.

Original language	English
Title of host publication	Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	413-416
Number of pages	4
ISBN (Electronic)	9781424460588, 9781424477326, 9781424460571
ISBN (Print)	9781424460564
DOIs	https://doi.org/10.1109/MWSYM.2010.5515028
Publication status	Published - May 2010
Event	2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 - Anaheim, United States Duration: 23 May 2010 → 28 May 2010

Other

Other	2010 IEEE MTT-S International Microwave Symposium, MTT - 2010
Country/Territory	United States
City	Anaheim
Period	23/05/10 → 28/05/10

Keywords

Current lag
Dispersion
GaN HEMT
Self-heating
Trap

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10.1109/MWSYM.2010.5515028

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title = "Characterization of trapping and thermal dispersion in GaN HEMTs",

abstract = "Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminalpotential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.",

keywords = "Current lag, Dispersion, GaN HEMT, Self-heating, Trap",

author = "Albahrani, {Sayed A.} and Parker, {Anthony E.}",

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doi = "10.1109/MWSYM.2010.5515028",

language = "English",

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booktitle = "Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International",

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Albahrani, SA & Parker, AE 2010, Characterization of trapping and thermal dispersion in GaN HEMTs. in Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International., 5515028, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 413-416, 2010 IEEE MTT-S International Microwave Symposium, MTT - 2010, Anaheim, California, United States, 23/05/10. https://doi.org/10.1109/MWSYM.2010.5515028

Characterization of trapping and thermal dispersion in GaN HEMTs. / Albahrani, Sayed A.; Parker, Anthony E.
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International. Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 413-416 5515028.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Parker, Anthony E.

PY - 2010/5

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N2 - Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminalpotential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.

AB - Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminalpotential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.

KW - Current lag

KW - Dispersion

KW - GaN HEMT

KW - Self-heating

KW - Trap

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DO - 10.1109/MWSYM.2010.5515028

M3 - Conference proceeding contribution

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EP - 416

BT - Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - 2010 IEEE MTT-S International Microwave Symposium, MTT - 2010

Y2 - 23 May 2010 through 28 May 2010

ER -

Characterization of trapping and thermal dispersion in GaN HEMTs

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