Characterization of trapping and thermal dispersion in GaN HEMTs

Sayed A. Albahrani, Anthony E. Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)


Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. Measurements and SPICE simulation are used to verify the capability of this model to explain the bias-and terminalpotential dependency of the turn-on transients and their time constants. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The interaction between two different trap mechanisms and two different self-heating processes is shown to adequately explain the different characteristics of the turn-on transient of the transistor under test.

Original languageEnglish
Title of host publicationMicrowave Symposium Digest (MTT), 2010 IEEE MTT-S International
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781424460588, 9781424477326, 9781424460571
ISBN (Print)9781424460564
Publication statusPublished - May 2010
Event2010 IEEE MTT-S International Microwave Symposium, MTT - 2010 - Anaheim, United States
Duration: 23 May 201028 May 2010


Other2010 IEEE MTT-S International Microwave Symposium, MTT - 2010
Country/TerritoryUnited States


  • Current lag
  • Dispersion
  • GaN HEMT
  • Self-heating
  • Trap


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