Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements

Sayed Ali Albahrani; Anthony Parker; Graham Town; Michael Heimlich; Bryan Schwitter; Simon Mahon

doi:10.1109/EuMIC.2016.7777515

Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements

Sayed Ali Albahrani, Anthony Parker, Graham Town, Michael Heimlich, Bryan Schwitter, Simon Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and self-heating mechanisms. These mechanisms are sensitive to bias, temperature, and frequency variations. A major difficulty in characterizing charge trapping in microwave FETs is to differentiate between the self-heating and charge trapping rates. In this paper, the trapping behavior in a GaN HEMT is characterized by performing isothermal three-stage pulse measurements.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	161-164
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777515
Publication status	Published - 7 Dec 2016
Event	11th European Microwave Integrated Circuits Conference (EuMIC) - London, United Kingdom Duration: 3 Oct 2016 → 4 Oct 2016

Conference

Conference	11th European Microwave Integrated Circuits Conference (EuMIC)
Country/Territory	United Kingdom
City	London
Period	3/10/16 → 4/10/16

Access to Document

10.1109/EuMIC.2016.7777515

Cite this

Albahrani, S. A., Parker, A., Town, G., Heimlich, M., Schwitter, B., & Mahon, S. (2016). Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 161-164). Article 7777515 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EuMIC.2016.7777515

@inproceedings{fe05703531024d019cb2c8dbadb987f4,

title = "Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements",

abstract = "Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and self-heating mechanisms. These mechanisms are sensitive to bias, temperature, and frequency variations. A major difficulty in characterizing charge trapping in microwave FETs is to differentiate between the self-heating and charge trapping rates. In this paper, the trapping behavior in a GaN HEMT is characterized by performing isothermal three-stage pulse measurements.",

author = "Albahrani, {Sayed Ali} and Anthony Parker and Graham Town and Michael Heimlich and Bryan Schwitter and Simon Mahon",

year = "2016",

month = dec,

day = "7",

doi = "10.1109/EuMIC.2016.7777515",

language = "English",

pages = "161--164",

booktitle = "EuMIC 2016 - 11th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "11th European Microwave Integrated Circuits Conference (EuMIC) ; Conference date: 03-10-2016 Through 04-10-2016",

}

Albahrani, SA, Parker, A , Town, G, Heimlich, M, Schwitter, B & Mahon, S 2016, Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777515, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 161-164, 11th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 3/10/16. https://doi.org/10.1109/EuMIC.2016.7777515

Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements. / Albahrani, Sayed Ali; Parker, Anthony ; Town, Graham et al.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 161-164 7777515.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements

AU - Albahrani, Sayed Ali

AU - Parker, Anthony

AU - Town, Graham

AU - Heimlich, Michael

AU - Schwitter, Bryan

AU - Mahon, Simon

PY - 2016/12/7

Y1 - 2016/12/7

N2 - Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and self-heating mechanisms. These mechanisms are sensitive to bias, temperature, and frequency variations. A major difficulty in characterizing charge trapping in microwave FETs is to differentiate between the self-heating and charge trapping rates. In this paper, the trapping behavior in a GaN HEMT is characterized by performing isothermal three-stage pulse measurements.

AB - Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and self-heating mechanisms. These mechanisms are sensitive to bias, temperature, and frequency variations. A major difficulty in characterizing charge trapping in microwave FETs is to differentiate between the self-heating and charge trapping rates. In this paper, the trapping behavior in a GaN HEMT is characterized by performing isothermal three-stage pulse measurements.

UR - http://www.scopus.com/inward/record.url?scp=85010452301&partnerID=8YFLogxK

U2 - 10.1109/EuMIC.2016.7777515

DO - 10.1109/EuMIC.2016.7777515

M3 - Conference proceeding contribution

AN - SCOPUS:85010452301

SP - 161

EP - 164

BT - EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 11th European Microwave Integrated Circuits Conference (EuMIC)

Y2 - 3 October 2016 through 4 October 2016

ER -

Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this