Characterization of trapping in a GaN HEMT by performing isothermal three-stage pulse measurements

Sayed Ali Albahrani, Anthony Parker, Graham Town, Michael Heimlich, Bryan Schwitter, Simon Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

Modern microwave circuit performance is susceptible to dispersion of the characteristics of microwave FETs. This is because the complex signals used in communication systems invoke charge trapping and self-heating mechanisms. These mechanisms are sensitive to bias, temperature, and frequency variations. A major difficulty in characterizing charge trapping in microwave FETs is to differentiate between the self-heating and charge trapping rates. In this paper, the trapping behavior in a GaN HEMT is characterized by performing isothermal three-stage pulse measurements.

Original languageEnglish
Title of host publicationEuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages161-164
Number of pages4
ISBN (Electronic)9782874870446
DOIs
Publication statusPublished - 7 Dec 2016
Event11th European Microwave Integrated Circuits Conference (EuMIC) - London, United Kingdom
Duration: 3 Oct 20164 Oct 2016

Conference

Conference11th European Microwave Integrated Circuits Conference (EuMIC)
CountryUnited Kingdom
CityLondon
Period3/10/164/10/16

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