Characterizing drain current dispersion in GaN HEMTs with a new trap model

Sayed A. Albahrani, James G. Rathmell, Anthony E. Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

8 Citations (Scopus)


Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.

Original languageEnglish
Title of host publicationEuMIC 2009
Subtitle of host publicationthe 4th European Microwave Integrated Circuits Conference: 28-29 September 2009, Rome, Italy
Place of PublicationOttignies-Louvain-la-Neuve
PublisherEuropean Microwave Association
Number of pages4
ISBN (Print)9782874870125
Publication statusPublished - Sept 2009
EventEuropean Microwave Conference (39th : 2009), European Microwave Week (EuMW) - Rome, Italy
Duration: 28 Sept 20092 Oct 2009


OtherEuropean Microwave Conference (39th : 2009), European Microwave Week (EuMW)


Dive into the research topics of 'Characterizing drain current dispersion in GaN HEMTs with a new trap model'. Together they form a unique fingerprint.

Cite this