Characterizing drain current dispersion in GaN HEMTs with a new trap model

Sayed A. Albahrani; James G. Rathmell; Anthony E. Parker

Characterizing drain current dispersion in GaN HEMTs with a new trap model

Sayed A. Albahrani, James G. Rathmell, Anthony E. Parker

Faculty of Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

8 Citations (Scopus)

Abstract

Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.

Original language	English
Title of host publication	EuMIC 2009
Subtitle of host publication	the 4th European Microwave Integrated Circuits Conference: 28-29 September 2009, Rome, Italy
Place of Publication	Ottignies-Louvain-la-Neuve
Publisher	European Microwave Association
Pages	339-342
Number of pages	4
ISBN (Print)	9782874870125
Publication status	Published - Sept 2009
Event	European Microwave Conference (39th : 2009), European Microwave Week (EuMW) - Rome, Italy Duration: 28 Sept 2009 → 2 Oct 2009

Other

Other	European Microwave Conference (39th : 2009), European Microwave Week (EuMW)
Country/Territory	Italy
City	Rome
Period	28/09/09 → 2/10/09

Access to Document

http://ieeexplore.ieee.org/abstract/document/5296081/

Cite this

@inproceedings{d06c4c5047f8458baa2372e057b350f3,

title = "Characterizing drain current dispersion in GaN HEMTs with a new trap model",

abstract = "Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.",

author = "Albahrani, {Sayed A.} and Rathmell, {James G.} and Parker, {Anthony E.}",

year = "2009",

month = sep,

language = "English",

isbn = "9782874870125",

pages = "339--342",

booktitle = "EuMIC 2009",

publisher = "European Microwave Association",

note = "European Microwave Conference (39th : 2009), European Microwave Week (EuMW) ; Conference date: 28-09-2009 Through 02-10-2009",

}

Albahrani, SA, Rathmell, JG & Parker, AE 2009, Characterizing drain current dispersion in GaN HEMTs with a new trap model. in EuMIC 2009: the 4th European Microwave Integrated Circuits Conference: 28-29 September 2009, Rome, Italy. European Microwave Association, Ottignies-Louvain-la-Neuve, pp. 339-342, European Microwave Conference (39th : 2009), European Microwave Week (EuMW), Rome, Italy, 28/09/09. <http://ieeexplore.ieee.org/abstract/document/5296081/>

Characterizing drain current dispersion in GaN HEMTs with a new trap model. / Albahrani, Sayed A.; Rathmell, James G.; Parker, Anthony E.
EuMIC 2009: the 4th European Microwave Integrated Circuits Conference: 28-29 September 2009, Rome, Italy. Ottignies-Louvain-la-Neuve: European Microwave Association, 2009. p. 339-342.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Characterizing drain current dispersion in GaN HEMTs with a new trap model

AU - Albahrani, Sayed A.

AU - Rathmell, James G.

AU - Parker, Anthony E.

PY - 2009/9

Y1 - 2009/9

N2 - Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.

AB - Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.

UR - http://www.scopus.com/inward/record.url?scp=72449178865&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:72949086659

SN - 9782874870125

SP - 339

EP - 342

BT - EuMIC 2009

PB - European Microwave Association

CY - Ottignies-Louvain-la-Neuve

T2 - European Microwave Conference (39th : 2009), European Microwave Week (EuMW)

Y2 - 28 September 2009 through 2 October 2009

ER -

Characterizing drain current dispersion in GaN HEMTs with a new trap model

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