Characterizing Drain Current Dispersion in GaN HEMTs with a New Trap Model

Sayed Albahrani, James G. Rathmell, Tony Parker

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

    Abstract

    Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.

    Original languageEnglish
    Title of host publication2009 European Microwave Conference, Vols 1-3
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1692-1695
    Number of pages2
    ISBN (Print)9781424447480
    Publication statusPublished - 2009
    Event37th European Microwave Conference - Rome, Italy
    Duration: 29 Sep 20091 Oct 2009

    Conference

    Conference37th European Microwave Conference
    CountryItaly
    CityRome
    Period29/09/091/10/09

    Keywords

    • TRANSISTORS

    Cite this

    Albahrani, S., Rathmell, J. G., & Parker, T. (2009). Characterizing Drain Current Dispersion in GaN HEMTs with a New Trap Model. In 2009 European Microwave Conference, Vols 1-3 (pp. 1692-1695). [5296100] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE).