Charge control in laterally coupled double quantum dots

G. Muñoz-Matutano*, M. Royo, J. I. Climente, J. Canet-Ferrer, D. Fuster, P. Alonso-González, I. Fernández-Martínez, J. Martínez-Pastor, Y. González, L. González, F. Briones, B. Alén

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias, leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunneling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compared to that of excitons in our system.

Original languageEnglish
Article number041308
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume84
Issue number4
DOIs
Publication statusPublished - 27 Jul 2011
Externally publishedYes

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