Charge modulation spectra in phosphorus-doped a-Si:H

J. Lyou, N. Kopidakis, E. A. Schiff*

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

Original languageEnglish
Pages (from-to)227-231
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 A
Publication statusPublished - 1 May 2000
Externally publishedYes

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