Charge partitioning scheme for FET models

Anthony E. Parker, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel charge, that can be readily extracted from measurement, and defines source charge as that for a drainless channel. The drain charge is the difference required for neutrality. This new approach is a contrast to alternative schemes that apportion part of the channel charge to the source. A significant outcome is the insight that the drain and source charges are larger in magnitude than the channel charge. This is an essential requirement for the correct modelling of reactive parameters not associated with the gate, such as drain-source capacitance, transcapacitance, or transconductance delay.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages237-240
Number of pages4
ISBN (Electronic)9782874870361
DOIs
Publication statusPublished - 23 Dec 2014
Event9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy
Duration: 6 Oct 20147 Oct 2014

Other

Other9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
CountryItaly
CityRome
Period6/10/147/10/14

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