Charge partitioning scheme for FET models

Anthony E. Parker; Simon J. Mahon

doi:10.1109/EuMIC.2014.6997836

Charge partitioning scheme for FET models

Anthony E. Parker, Simon J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel charge, that can be readily extracted from measurement, and defines source charge as that for a drainless channel. The drain charge is the difference required for neutrality. This new approach is a contrast to alternative schemes that apportion part of the channel charge to the source. A significant outcome is the insight that the drain and source charges are larger in magnitude than the channel charge. This is an essential requirement for the correct modelling of reactive parameters not associated with the gate, such as drain-source capacitance, transcapacitance, or transconductance delay.

Original language	English
Title of host publication	European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	237-240
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997836
Publication status	Published - 23 Dec 2014
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy Duration: 6 Oct 2014 → 7 Oct 2014

Other

Other	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country/Territory	Italy
City	Rome
Period	6/10/14 → 7/10/14

Access to Document

10.1109/EuMIC.2014.6997836

Cite this

Parker, A. E., & Mahon, S. J. (2014). Charge partitioning scheme for FET models. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 237-240). Article 6997836 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EuMIC.2014.6997836

@inproceedings{6ea45efe8e314046b30aebb3f83bf19e,

title = "Charge partitioning scheme for FET models",

abstract = "A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel charge, that can be readily extracted from measurement, and defines source charge as that for a drainless channel. The drain charge is the difference required for neutrality. This new approach is a contrast to alternative schemes that apportion part of the channel charge to the source. A significant outcome is the insight that the drain and source charges are larger in magnitude than the channel charge. This is an essential requirement for the correct modelling of reactive parameters not associated with the gate, such as drain-source capacitance, transcapacitance, or transconductance delay.",

author = "Parker, {Anthony E.} and Mahon, {Simon J.}",

year = "2014",

month = dec,

day = "23",

doi = "10.1109/EuMIC.2014.6997836",

language = "English",

pages = "237--240",

booktitle = "European Microwave Week 2014: {"}Connecting the Future{"}, EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 ; Conference date: 06-10-2014 Through 07-10-2014",

}

Parker, AE & Mahon, SJ 2014, Charge partitioning scheme for FET models. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference., 6997836, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 237-240, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 6/10/14. https://doi.org/10.1109/EuMIC.2014.6997836

Charge partitioning scheme for FET models. / Parker, Anthony E.; Mahon, Simon J.
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 237-240 6997836.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Charge partitioning scheme for FET models

AU - Parker, Anthony E.

AU - Mahon, Simon J.

PY - 2014/12/23

Y1 - 2014/12/23

N2 - A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel charge, that can be readily extracted from measurement, and defines source charge as that for a drainless channel. The drain charge is the difference required for neutrality. This new approach is a contrast to alternative schemes that apportion part of the channel charge to the source. A significant outcome is the insight that the drain and source charges are larger in magnitude than the channel charge. This is an essential requirement for the correct modelling of reactive parameters not associated with the gate, such as drain-source capacitance, transcapacitance, or transconductance delay.

AB - A field effect transistor channel charge partitioning scheme is proposed that explains small-signal port parameters associated with the source and drain terminals. The scheme starts with the channel charge, that can be readily extracted from measurement, and defines source charge as that for a drainless channel. The drain charge is the difference required for neutrality. This new approach is a contrast to alternative schemes that apportion part of the channel charge to the source. A significant outcome is the insight that the drain and source charges are larger in magnitude than the channel charge. This is an essential requirement for the correct modelling of reactive parameters not associated with the gate, such as drain-source capacitance, transcapacitance, or transconductance delay.

UR - http://www.scopus.com/inward/record.url?scp=84921313904&partnerID=8YFLogxK

U2 - 10.1109/EuMIC.2014.6997836

DO - 10.1109/EuMIC.2014.6997836

M3 - Conference proceeding contribution

AN - SCOPUS:84921313904

SP - 237

EP - 240

BT - European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014

Y2 - 6 October 2014 through 7 October 2014

ER -

Charge partitioning scheme for FET models

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this