Charge trapping and intermodulation in HEMTs

James Brinkhoff; Anthony E. Parker

Charge trapping and intermodulation in HEMTs

James Brinkhoff^*, Anthony E. Parker

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.

Original language	English
Pages (from-to)	799-802
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 2004

Keywords

FET amplifiers
Intermodulation distortion
Linearization
Memory effects

Cite this

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title = "Charge trapping and intermodulation in HEMTs",

abstract = "Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.",

keywords = "FET amplifiers, Intermodulation distortion, Linearization, Memory effects",

author = "James Brinkhoff and Parker, {Anthony E.}",

year = "2004",

language = "English",

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journal = "IEEE MTT-S International Microwave Symposium Digest",

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T1 - Charge trapping and intermodulation in HEMTs

AU - Brinkhoff, James

AU - Parker, Anthony E.

PY - 2004

Y1 - 2004

N2 - Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.

AB - Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.

KW - FET amplifiers

KW - Intermodulation distortion

KW - Linearization

KW - Memory effects

UR - http://www.scopus.com/inward/record.url?scp=4444287494&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4444287494

VL - 2

SP - 799

EP - 802

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -

Charge trapping and intermodulation in HEMTs

Abstract

Keywords

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