Charge trapping and intermodulation in HEMTs

James Brinkhoff*, Anthony E. Parker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.

Original languageEnglish
Pages (from-to)799-802
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 2004


  • FET amplifiers
  • Intermodulation distortion
  • Linearization
  • Memory effects


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