Circuit model for double-energy-level trap centers in GaN HEMTs

Sayed Ali Albahrani; Anthony Parker; Michael Heimlich

doi:10.1109/TED.2017.2650241

Circuit model for double-energy-level trap centers in GaN HEMTs

Sayed Ali Albahrani, Anthony Parker^*, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple, circuit implementation of a DEL trap center in an FET is presented that is immediately extendable to a trap center with more than two energy levels. The model is based on the Shockley-Read-Hall statistics of the trapping process. The implementation is suitable for both time-domain and harmonic-balance simulations. Simulation results validate the proposed model.

Original language	English
Pages (from-to)	998-1006
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	3
DOIs	https://doi.org/10.1109/TED.2017.2650241
Publication status	Published - Mar 2017

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10.1109/TED.2017.2650241

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Cite this

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title = "Circuit model for double-energy-level trap centers in GaN HEMTs",

abstract = "Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple, circuit implementation of a DEL trap center in an FET is presented that is immediately extendable to a trap center with more than two energy levels. The model is based on the Shockley-Read-Hall statistics of the trapping process. The implementation is suitable for both time-domain and harmonic-balance simulations. Simulation results validate the proposed model.",

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AU - Parker, Anthony

AU - Heimlich, Michael

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N2 - Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple, circuit implementation of a DEL trap center in an FET is presented that is immediately extendable to a trap center with more than two energy levels. The model is based on the Shockley-Read-Hall statistics of the trapping process. The implementation is suitable for both time-domain and harmonic-balance simulations. Simulation results validate the proposed model.

AB - Measurement results performed on a GaN high-electron-mobility transistor that show the presence of a double-energy-level (DEL) trap center in the device are presented. A novel, yet simple, circuit implementation of a DEL trap center in an FET is presented that is immediately extendable to a trap center with more than two energy levels. The model is based on the Shockley-Read-Hall statistics of the trapping process. The implementation is suitable for both time-domain and harmonic-balance simulations. Simulation results validate the proposed model.

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JF - IEEE Transactions on Electron Devices

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