Classification of trapping characteristic in HEMTs

Sayed Albahrani, Tony Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

4 Citations (Scopus)


Trapping phenomenon is classified through its man ifestation in the I DS-V DS and I DS-V GS characteristics using a new trapping model based on SRH theory. The classification is based on the nature of the trap-centers (acceptor/donor traps), their exact position (bulk/surface region) and their potential de pendency on terminal-potentials. Different models are proposed for each position. The proposed simulation based classification predicts several kink effect and knee walkout behaviors in the IV -characteristic as a result of the presence of traps in the transistor.

Original languageEnglish
Title of host publicationProceedings of the 5th European Microwave Integrated Circuits Conference
Place of PublicationBelgium
Number of pages4
ISBN (Print)9782874870156
Publication statusPublished - Oct 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC - 2010 - Paris, France
Duration: 26 Sept 20101 Oct 2010


Other13th European Microwave Week 2010: Connecting the World, EuMIC - 2010


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