Classification of trapping characteristic in HEMTs

Sayed Albahrani, Tony Parker

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

4 Citations (Scopus)

Abstract

Trapping phenomenon is classified through its man ifestation in the I DS-V DS and I DS-V GS characteristics using a new trapping model based on SRH theory. The classification is based on the nature of the trap-centers (acceptor/donor traps), their exact position (bulk/surface region) and their potential de pendency on terminal-potentials. Different models are proposed for each position. The proposed simulation based classification predicts several kink effect and knee walkout behaviors in the IV -characteristic as a result of the presence of traps in the transistor.

Original languageEnglish
Title of host publicationProceedings of the 5th European Microwave Integrated Circuits Conference
Place of PublicationBelgium
PublisherEuMA
Pages178-181
Number of pages4
ISBN (Print)9782874870156
Publication statusPublished - Oct 2010
Event13th European Microwave Week 2010: Connecting the World, EuMIC - 2010 - Paris, France
Duration: 26 Sep 20101 Oct 2010

Other

Other13th European Microwave Week 2010: Connecting the World, EuMIC - 2010
CountryFrance
CityParis
Period26/09/101/10/10

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