Abstract
Trapping phenomenon is classified through its man ifestation in the I DS-V DS and I DS-V GS characteristics using a new trapping model based on SRH theory. The classification is based on the nature of the trap-centers (acceptor/donor traps), their exact position (bulk/surface region) and their potential de pendency on terminal-potentials. Different models are proposed for each position. The proposed simulation based classification predicts several kink effect and knee walkout behaviors in the IV -characteristic as a result of the presence of traps in the transistor.
| Original language | English |
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| Title of host publication | Proceedings of the 5th European Microwave Integrated Circuits Conference |
| Place of Publication | Belgium |
| Publisher | EuMA |
| Pages | 178-181 |
| Number of pages | 4 |
| ISBN (Print) | 9782874870156 |
| Publication status | Published - Oct 2010 |
| Event | 13th European Microwave Week 2010: Connecting the World, EuMIC - 2010 - Paris, France Duration: 26 Sept 2010 → 1 Oct 2010 |
Other
| Other | 13th European Microwave Week 2010: Connecting the World, EuMIC - 2010 |
|---|---|
| Country/Territory | France |
| City | Paris |
| Period | 26/09/10 → 1/10/10 |