Close-from model of shunt capacitance and inductance of microstrip step discontinuities

Himanshu Singh; A. K. Verma

doi:10.1109/ICIMW.2008.4665657

Close-from model of shunt capacitance and inductance of microstrip step discontinuities

Himanshu Singh^*, A. K. Verma

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Some results for the inductance and capacitance associated with a step discontinuity in a microstrip are available. We present a model on the based of K.C. Gupta proposal for inductance having a maximum deviation 5% and average deviation 3% for ∈_r = 9.6 and compare the numerical calibration with de-embedding techniques used in the planar electromagnetic (EM) simulation (SONNET) for ∈_r = 2.3, 4.0, 15.1, 20.0 & 40.0. These techniques are used to eliminate the port discontinuities brought by the current/voltage exciting source. The closed form model for step shunt capacitance having a maximum deviation 10% and average deviation 4.66% for _{2.3 ≤∈ r ≤ 40.0} against numerical results of the internal equation method. The models have average deviation 0.027 for the C_p and 0.015 for L_s against the results of Sonnet.

Original language	English
Title of host publication	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Print)	9781424421206, 9781424421190, 1424421195
DOIs	https://doi.org/10.1109/ICIMW.2008.4665657
Publication status	Published - 2008
Externally published	Yes
Event	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 - Pasadena, CA, United States Duration: 15 Sept 2008 → 19 Sept 2008

Other

Other	33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008
Country/Territory	United States
City	Pasadena, CA
Period	15/09/08 → 19/09/08

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10.1109/ICIMW.2008.4665657

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Singh, H., & Verma, A. K. (2008). Close-from model of shunt capacitance and inductance of microstrip step discontinuities. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008 (pp. 1-2). Article 4665657 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICIMW.2008.4665657

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title = "Close-from model of shunt capacitance and inductance of microstrip step discontinuities",

abstract = "Some results for the inductance and capacitance associated with a step discontinuity in a microstrip are available. We present a model on the based of K.C. Gupta proposal for inductance having a maximum deviation 5% and average deviation 3% for ∈r = 9.6 and compare the numerical calibration with de-embedding techniques used in the planar electromagnetic (EM) simulation (SONNET) for ∈r = 2.3, 4.0, 15.1, 20.0 & 40.0. These techniques are used to eliminate the port discontinuities brought by the current/voltage exciting source. The closed form model for step shunt capacitance having a maximum deviation 10% and average deviation 4.66% for 2.3 ≤∈ r ≤ 40.0 against numerical results of the internal equation method. The models have average deviation 0.027 for the Cp and 0.015 for Ls against the results of Sonnet.",

author = "Himanshu Singh and Verma, {A. K.}",

year = "2008",

doi = "10.1109/ICIMW.2008.4665657",

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Singh, H & Verma, AK 2008, Close-from model of shunt capacitance and inductance of microstrip step discontinuities. in 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008., 4665657, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-2, 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008, Pasadena, CA, United States, 15/09/08. https://doi.org/10.1109/ICIMW.2008.4665657

Close-from model of shunt capacitance and inductance of microstrip step discontinuities. / Singh, Himanshu; Verma, A. K.
33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2008. p. 1-2 4665657.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AB - Some results for the inductance and capacitance associated with a step discontinuity in a microstrip are available. We present a model on the based of K.C. Gupta proposal for inductance having a maximum deviation 5% and average deviation 3% for ∈r = 9.6 and compare the numerical calibration with de-embedding techniques used in the planar electromagnetic (EM) simulation (SONNET) for ∈r = 2.3, 4.0, 15.1, 20.0 & 40.0. These techniques are used to eliminate the port discontinuities brought by the current/voltage exciting source. The closed form model for step shunt capacitance having a maximum deviation 10% and average deviation 4.66% for 2.3 ≤∈ r ≤ 40.0 against numerical results of the internal equation method. The models have average deviation 0.027 for the Cp and 0.015 for Ls against the results of Sonnet.

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Singh H, Verma AK. Close-from model of shunt capacitance and inductance of microstrip step discontinuities. In 33rd International Conference on Infrared and Millimeter Waves and the 16th International Conference on Terahertz Electronics, 2008, IRMMW-THz 2008. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2008. p. 1-2. 4665657 doi: 10.1109/ICIMW.2008.4665657

Close-from model of shunt capacitance and inductance of microstrip step discontinuities

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