Coherent and phonon-assisted tunnelling in asymmetric double barrier resonant tunnelling structures

Jun-jie Shi, B. C. Sanders, Shao-hua Pan

Research output: Contribution to journalArticleResearchpeer-review

Abstract

We present a theory for calculating the phonon-assisted tunnelling current in asymmetric double barrier resonant tunnelling structures (DBRTS), in which all of the phonon modes including the interface modes and the confined bulk-like LO phonons and the conduction band nonparabolicity are considered. An important physical picture about coherent and phonon-assisted tunnelling is given. The coherent tunnelling current can be directly determined by both the width of the resonant level and the peak value of the transmission coefficient at the resonant level. The phonon-assisted tunnelling current mainly comes from electron interaction with higher frequency interface phonons (especially the interface phonons localised at either interface of the left barrier). Phonon-assisted tunnelling makes a significant contribution to the valley current. The subband nonparabolicity strongly influences on electron-phonon scattering and current-to-voltage characteristics. A specially designed asymmetric DBRTS may have an improved performance over the symmetric DBRTS.
LanguageEnglish
Pages35-51
Number of pages17
JournalAustralian Journal of Physics
Volume53
Issue number1
Publication statusPublished - 2000

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resonant tunneling
phonons
valleys
conduction bands
electron scattering
electric potential
coefficients
scattering
electrons

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Shi, Jun-jie ; Sanders, B. C. ; Pan, Shao-hua. / Coherent and phonon-assisted tunnelling in asymmetric double barrier resonant tunnelling structures. In: Australian Journal of Physics. 2000 ; Vol. 53, No. 1. pp. 35-51.
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Coherent and phonon-assisted tunnelling in asymmetric double barrier resonant tunnelling structures. / Shi, Jun-jie; Sanders, B. C.; Pan, Shao-hua.

In: Australian Journal of Physics, Vol. 53, No. 1, 2000, p. 35-51.

Research output: Contribution to journalArticleResearchpeer-review

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AU - Sanders, B. C.

AU - Pan, Shao-hua

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N2 - We present a theory for calculating the phonon-assisted tunnelling current in asymmetric double barrier resonant tunnelling structures (DBRTS), in which all of the phonon modes including the interface modes and the confined bulk-like LO phonons and the conduction band nonparabolicity are considered. An important physical picture about coherent and phonon-assisted tunnelling is given. The coherent tunnelling current can be directly determined by both the width of the resonant level and the peak value of the transmission coefficient at the resonant level. The phonon-assisted tunnelling current mainly comes from electron interaction with higher frequency interface phonons (especially the interface phonons localised at either interface of the left barrier). Phonon-assisted tunnelling makes a significant contribution to the valley current. The subband nonparabolicity strongly influences on electron-phonon scattering and current-to-voltage characteristics. A specially designed asymmetric DBRTS may have an improved performance over the symmetric DBRTS.

AB - We present a theory for calculating the phonon-assisted tunnelling current in asymmetric double barrier resonant tunnelling structures (DBRTS), in which all of the phonon modes including the interface modes and the confined bulk-like LO phonons and the conduction band nonparabolicity are considered. An important physical picture about coherent and phonon-assisted tunnelling is given. The coherent tunnelling current can be directly determined by both the width of the resonant level and the peak value of the transmission coefficient at the resonant level. The phonon-assisted tunnelling current mainly comes from electron interaction with higher frequency interface phonons (especially the interface phonons localised at either interface of the left barrier). Phonon-assisted tunnelling makes a significant contribution to the valley current. The subband nonparabolicity strongly influences on electron-phonon scattering and current-to-voltage characteristics. A specially designed asymmetric DBRTS may have an improved performance over the symmetric DBRTS.

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