Comment on "Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature"

D. M. Bagnall^*, K. P. O'Donnell

^*Corresponding author for this work

Research output: Contribution to journal › Comment/opinion › peer-review

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@article{710d222578a249fd8f04d307aabf026c,

title = "Comment on {"}Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature{"}",

author = "Bagnall, {D. M.} and O'Donnell, {K. P.}",

year = "1996",

month = may,

day = "27",

doi = "10.1063/1.116057",

language = "English",

volume = "68",

pages = "3197",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Comment on "Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature"

AU - Bagnall, D. M.

AU - O'Donnell, K. P.

PY - 1996/5/27

Y1 - 1996/5/27

UR - http://www.scopus.com/inward/record.url?scp=51149214529&partnerID=8YFLogxK

U2 - 10.1063/1.116057

DO - 10.1063/1.116057

M3 - Comment/opinion

AN - SCOPUS:51149214529

SN - 0003-6951

VL - 68

SP - 3197

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -