Comments on "ill conditioning in self-heating FET models"

Anthony E. Parker*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A recent letter reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.

Original languageEnglish
Pages (from-to)351-352
Number of pages2
JournalIEEE Microwave and Wireless Components Letters
Volume12
Issue number9
DOIs
Publication statusPublished - Sep 2002

Fingerprint

Dive into the research topics of 'Comments on "ill conditioning in self-heating FET models"'. Together they form a unique fingerprint.

Cite this