Comments on "ill conditioning in self-heating FET models"

Anthony E. Parker*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    A recent letter reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.

    Original languageEnglish
    Pages (from-to)351-352
    Number of pages2
    JournalIEEE Microwave and Wireless Components Letters
    Volume12
    Issue number9
    DOIs
    Publication statusPublished - Sep 2002

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