Comments on "ill conditioning in self-heating FET models"

Anthony E. Parker

doi:10.1109/LMWC.2002.803141

Comments on "ill conditioning in self-heating FET models"

Anthony E. Parker^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A recent letter reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.

Original language	English
Pages (from-to)	351-352
Number of pages	2
Journal	IEEE Microwave and Wireless Components Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2002.803141
Publication status	Published - Sept 2002

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10.1109/LMWC.2002.803141

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abstract = "A recent letter reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.",

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AB - A recent letter reported ill conditioning in nonlinear circuit simulators caused by the introduction of self-heating effects into FET models. This is true for circumstances outlined in that work but is a consequence of using an incomplete thermal model. This letter points out that an account for both thermal potential and mobility variation with temperature will eliminate the problem.

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DO - 10.1109/LMWC.2002.803141

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 9

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Comments on "ill conditioning in self-heating FET models"

Abstract

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