Compact charge-based physical models for current and capacitances in AlGaN/GaN hemts

Fetene Mulugeta Yigletu, Sourabh Khandelwal, Tor A. Fjeldly, Benjamin Iniguez

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

This paper presents physics-based compact models for the C-V and I-V characteristics of AlGaN/GaN HEMT devices. The contribution of only the first energy level in the triangular quantum well at the AlGaN/GaN interface (where most of the charge carriers of the 2-DEG channel reside) is considered, which resulted in an accurate and simple unified charge control model. Based on this, analytical models of the drain current, the gate charge, and the gate capacitances have been developed. The models cover all the different operating regimes of a device. The excellent agreements between the model and measured C-V and I-V characteristics of devices with different gate lengths have demonstrated the validity of the model.

Original languageEnglish
Article number6627997
Pages (from-to)3746-3752
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number11
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • HEMTs
  • power devices
  • quantum well
  • semiconductor heterostructures
  • simulation and modeling

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