Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M. Ben Masaud*, E. Jaberansary, S. M. Sultan, O. Clark, T. Sharp, R. Gunn, D. M. Bagnall, H. M H Chong

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).

Original languageEnglish
Title of host publication12th IEEE International Conference on Nanotechnology, NANO 2012
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Electronic)9781467322003
ISBN (Print)9781467321983
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period20/08/1223/08/12

Keywords

  • Fabry-Perot modulator
  • heterojunction
  • plasma dispersion effect
  • silicon photonics

Fingerprint Dive into the research topics of 'Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure'. Together they form a unique fingerprint.

Cite this