Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M. Ben Masaud; E. Jaberansary; S. M. Sultan; O. Clark; T. Sharp; R. Gunn; D. M. Bagnall; H. M H Chong

doi:10.1109/NANO.2012.6322085

Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure

T. M. Ben Masaud^*, E. Jaberansary, S. M. Sultan, O. Clark, T. Sharp, R. Gunn, D. M. Bagnall, H. M H Chong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).

Original language	English
Title of host publication	12th IEEE International Conference on Nanotechnology, NANO 2012
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	3
ISBN (Electronic)	9781467322003
ISBN (Print)	9781467321983
DOIs	https://doi.org/10.1109/NANO.2012.6322085
Publication status	Published - 2012
Externally published	Yes
Event	2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom Duration: 20 Aug 2012 → 23 Aug 2012

Conference

Conference	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/Territory	United Kingdom
City	Birmingham
Period	20/08/12 → 23/08/12

Keywords

Fabry-Perot modulator
heterojunction
plasma dispersion effect
silicon photonics

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10.1109/NANO.2012.6322085

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Ben Masaud, T. M., Jaberansary, E., Sultan, S. M., Clark, O., Sharp, T., Gunn, R., Bagnall, D. M., & Chong, H. M. H. (2012). Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure. In 12th IEEE International Conference on Nanotechnology, NANO 2012 Article 6322085 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/NANO.2012.6322085

@inproceedings{9697bb82176b41fcac7cf2ce61c003f0,

title = "Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure",

abstract = "We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).",

keywords = "Fabry-Perot modulator, heterojunction, plasma dispersion effect, silicon photonics",

author = "{Ben Masaud}, {T. M.} and E. Jaberansary and Sultan, {S. M.} and O. Clark and T. Sharp and R. Gunn and Bagnall, {D. M.} and Chong, {H. M H}",

year = "2012",

doi = "10.1109/NANO.2012.6322085",

language = "English",

isbn = "9781467321983",

booktitle = "12th IEEE International Conference on Nanotechnology, NANO 2012",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 12th IEEE International Conference on Nanotechnology, NANO 2012 ; Conference date: 20-08-2012 Through 23-08-2012",

}

Ben Masaud, TM, Jaberansary, E, Sultan, SM, Clark, O, Sharp, T, Gunn, R, Bagnall, DM & Chong, HMH 2012, Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure. in 12th IEEE International Conference on Nanotechnology, NANO 2012., 6322085, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 20/08/12. https://doi.org/10.1109/NANO.2012.6322085

Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure. / Ben Masaud, T. M.; Jaberansary, E.; Sultan, S. M. et al.
12th IEEE International Conference on Nanotechnology, NANO 2012. Piscataway: Institute of Electrical and Electronics Engineers (IEEE), 2012. 6322085.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure

AU - Ben Masaud, T. M.

AU - Jaberansary, E.

AU - Sultan, S. M.

AU - Clark, O.

AU - Sharp, T.

AU - Gunn, R.

AU - Bagnall, D. M.

AU - Chong, H. M H

PY - 2012

Y1 - 2012

N2 - We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).

AB - We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).

KW - Fabry-Perot modulator

KW - heterojunction

KW - plasma dispersion effect

KW - silicon photonics

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U2 - 10.1109/NANO.2012.6322085

DO - 10.1109/NANO.2012.6322085

M3 - Conference proceeding contribution

AN - SCOPUS:84869155569

SN - 9781467321983

BT - 12th IEEE International Conference on Nanotechnology, NANO 2012

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway

T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012

Y2 - 20 August 2012 through 23 August 2012

ER -

Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure

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