Compact model for reverse TLP I-V characteristics of ESD diodes

Sourabh Khandelwal; Danial Bavi

Compact model for reverse TLP I-V characteristics of ESD diodes

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

Abstract

A physics-based compact model for the reverse bias transmission line pulse (TLP) I-V characteristics of ESD diodes is presented. Model formulations capture the post-reverse breakdown I-V behavior accurately and account for the temperature dependence of these characteristics. Model accuracy is demonstrated by comparing it with reverse TLP I-V measurements.

Original language	English
Title of host publication	International EOS/ESD Symposium on Design and System 2022
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781585373383
ISBN (Print)	9781665469814
Publication status	Published - 2022
Event	2nd Annual International EOS/ESD Symposium on Design and System, IEDS 2022 - Virtual, Online, China Duration: 9 Nov 2022 → 11 Nov 2022

Conference

Conference	2nd Annual International EOS/ESD Symposium on Design and System, IEDS 2022
Country/Territory	China
City	Virtual, Online
Period	9/11/22 → 11/11/22

Access to Document

https://ieeexplore.ieee.org/document/9969349

Cite this

@inproceedings{492d53073d014d4887f198fee0dc6fbd,

title = "Compact model for reverse TLP I-V characteristics of ESD diodes",

abstract = "A physics-based compact model for the reverse bias transmission line pulse (TLP) I-V characteristics of ESD diodes is presented. Model formulations capture the post-reverse breakdown I-V behavior accurately and account for the temperature dependence of these characteristics. Model accuracy is demonstrated by comparing it with reverse TLP I-V measurements. ",

author = "Sourabh Khandelwal and Danial Bavi",

year = "2022",

language = "English",

isbn = "9781665469814",

booktitle = "International EOS/ESD Symposium on Design and System 2022",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2nd Annual International EOS/ESD Symposium on Design and System, IEDS 2022 ; Conference date: 09-11-2022 Through 11-11-2022",

}

Khandelwal, S & Bavi, D 2022, Compact model for reverse TLP I-V characteristics of ESD diodes. in International EOS/ESD Symposium on Design and System 2022. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2nd Annual International EOS/ESD Symposium on Design and System, IEDS 2022, Virtual, Online, China, 9/11/22. <https://ieeexplore.ieee.org/document/9969349>

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T1 - Compact model for reverse TLP I-V characteristics of ESD diodes

AU - Khandelwal, Sourabh

AU - Bavi, Danial

PY - 2022

Y1 - 2022

N2 - A physics-based compact model for the reverse bias transmission line pulse (TLP) I-V characteristics of ESD diodes is presented. Model formulations capture the post-reverse breakdown I-V behavior accurately and account for the temperature dependence of these characteristics. Model accuracy is demonstrated by comparing it with reverse TLP I-V measurements.

AB - A physics-based compact model for the reverse bias transmission line pulse (TLP) I-V characteristics of ESD diodes is presented. Model formulations capture the post-reverse breakdown I-V behavior accurately and account for the temperature dependence of these characteristics. Model accuracy is demonstrated by comparing it with reverse TLP I-V measurements.

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M3 - Conference proceeding contribution

AN - SCOPUS:85144626658

SN - 9781665469814

BT - International EOS/ESD Symposium on Design and System 2022

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2nd Annual International EOS/ESD Symposium on Design and System, IEDS 2022

Y2 - 9 November 2022 through 11 November 2022

ER -

Compact model for reverse TLP I-V characteristics of ESD diodes

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