Compact modeling of flicker noise in HEMTs

Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

Original languageEnglish
Article number6878427
Pages (from-to)174-178
Number of pages5
JournalIEEE Journal of the Electron Devices Society
Volume2
Issue number6
DOIs
Publication statusPublished - 1 Nov 2014
Externally publishedYes

Keywords

  • flicker noise
  • HEMT
  • noise model

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