Compact modeling of flicker noise in HEMTs

Avirup Dasgupta; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/JEDS.2014.2347991

Compact modeling of flicker noise in HEMTs

Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

Original language	English
Article number	6878427
Pages (from-to)	174-178
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	2
Issue number	6
DOIs	https://doi.org/10.1109/JEDS.2014.2347991
Publication status	Published - 1 Nov 2014
Externally published	Yes

Keywords

flicker noise
HEMT
noise model

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10.1109/JEDS.2014.2347991

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abstract = "In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.",

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KW - noise model

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Compact modeling of flicker noise in HEMTs

Abstract

Keywords

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