Compact modeling of flicker noise in HEMTs

Avirup Dasgupta; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/JEDS.2014.2347991

Compact modeling of flicker noise in HEMTs

Avirup Dasgupta, Sourabh Khandelwal, Yogesh Singh Chauhan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

Original language	English
Article number	6878427
Pages (from-to)	174-178
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	2
Issue number	6
DOIs	https://doi.org/10.1109/JEDS.2014.2347991
Publication status	Published - 1 Nov 2014
Externally published	Yes

Keywords

flicker noise
HEMT
noise model

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10.1109/JEDS.2014.2347991

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@article{4e9824a4a48a4671a38f22586e69e076,

title = "Compact modeling of flicker noise in HEMTs",

abstract = "In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.",

keywords = "flicker noise, HEMT, noise model",

author = "Avirup Dasgupta and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2014",

month = "11",

day = "1",

doi = "10.1109/JEDS.2014.2347991",

language = "English",

volume = "2",

pages = "174--178",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "6",

}

TY - JOUR

T1 - Compact modeling of flicker noise in HEMTs

AU - Dasgupta, Avirup

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

PY - 2014/11/1

Y1 - 2014/11/1

N2 - In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

AB - In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations.

KW - flicker noise

KW - HEMT

KW - noise model

UR - http://www.scopus.com/inward/record.url?scp=84908461371&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2014.2347991

DO - 10.1109/JEDS.2014.2347991

M3 - Article

VL - 2

SP - 174

EP - 178

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

SN - 2168-6734

IS - 6

M1 - 6878427

ER -