Compact modeling of intrinsic capacitances in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, Tor A. Fjeldly

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

We present an analytical model for intrinsic gate-source and gate-drain capacitances in AlGaN/GaN HEMT devices. A physics-based analytical expression for 2-DEG charge density developed previously by our group along with the Meyer capacitance formulations is used to derive the intrinsic capacitances. The model is in excellent agreement with experimental data.

Original languageEnglish
Title of host publicationNanotechnology 2012
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational
Place of PublicationCambridge, Massachusettes
PublisherCRC Press, Taylor & Francis Group
Pages744-747
Number of pages4
Volume2
ISBN (Print)9781466562752
Publication statusPublished - 2012
Externally publishedYes
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: 18 Jun 201221 Jun 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period18/06/1221/06/12

Keywords

  • AlGaN/GaN HEMTs
  • Compact models
  • MODFETs

Fingerprint Dive into the research topics of 'Compact modeling of intrinsic capacitances in AlGaN/GaN HEMT devices'. Together they form a unique fingerprint.

Cite this