Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model

D. Bavi; S. Khandelwal

doi:10.1109/TPEC60005.2024.10472194

Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model

D. Bavi, S. Khandelwal

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

In this paper, we analyse and precisely model the current-voltage (I-V) characteristics of Vertical GaN Fin-JFETs for operation temperatures of T= 25°C, 100°C and 200°C. To the authors' discernment, this marks the inaugural instance wherein a concise model for Gallium Nitride (GaN) Fin-Junction Field-Effect Transistors (Fin-JFETs) is introduced. We employ the ASM-HEMT model, an industry-standard, for the modelling of GaN Fin-JFETs. By modeling I-V behaviors at different temperatures the variations in mobility and threshold voltage with ambient temperatures is obtained. ASM-HEMT model formulations are found to be sufficient to accurately model GaN Fin-JFET device behavior.

Original language	English
Title of host publication	2024 IEEE Texas Power and Energy Conference (TPEC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-5
Number of pages	5
ISBN (Electronic)	9798350331202
ISBN (Print)	9798350331219
DOIs	https://doi.org/10.1109/TPEC60005.2024.10472194
Publication status	Published - 2024
Event	2024 IEEE Texas Power and Energy Conference, TPEC 2024 - College Station, United States Duration: 12 Feb 2024 → 13 Feb 2024

Conference

Conference	2024 IEEE Texas Power and Energy Conference, TPEC 2024
Country/Territory	United States
City	College Station
Period	12/02/24 → 13/02/24

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10.1109/TPEC60005.2024.10472194

Cite this

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title = "Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model",

abstract = "In this paper, we analyse and precisely model the current-voltage (I-V) characteristics of Vertical GaN Fin-JFETs for operation temperatures of T= 25°C, 100°C and 200°C. To the authors' discernment, this marks the inaugural instance wherein a concise model for Gallium Nitride (GaN) Fin-Junction Field-Effect Transistors (Fin-JFETs) is introduced. We employ the ASM-HEMT model, an industry-standard, for the modelling of GaN Fin-JFETs. By modeling I-V behaviors at different temperatures the variations in mobility and threshold voltage with ambient temperatures is obtained. ASM-HEMT model formulations are found to be sufficient to accurately model GaN Fin-JFET device behavior.",

author = "D. Bavi and S. Khandelwal",

year = "2024",

doi = "10.1109/TPEC60005.2024.10472194",

language = "English",

isbn = "9798350331219",

pages = "1--5",

booktitle = "2024 IEEE Texas Power and Energy Conference (TPEC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2024 IEEE Texas Power and Energy Conference, TPEC 2024 ; Conference date: 12-02-2024 Through 13-02-2024",

}

Bavi, D & Khandelwal, S 2024, Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model. in 2024 IEEE Texas Power and Energy Conference (TPEC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-5, 2024 IEEE Texas Power and Energy Conference, TPEC 2024, College Station, United States, 12/02/24. https://doi.org/10.1109/TPEC60005.2024.10472194

TY - GEN

T1 - Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model

AU - Bavi, D.

AU - Khandelwal, S.

PY - 2024

Y1 - 2024

N2 - In this paper, we analyse and precisely model the current-voltage (I-V) characteristics of Vertical GaN Fin-JFETs for operation temperatures of T= 25°C, 100°C and 200°C. To the authors' discernment, this marks the inaugural instance wherein a concise model for Gallium Nitride (GaN) Fin-Junction Field-Effect Transistors (Fin-JFETs) is introduced. We employ the ASM-HEMT model, an industry-standard, for the modelling of GaN Fin-JFETs. By modeling I-V behaviors at different temperatures the variations in mobility and threshold voltage with ambient temperatures is obtained. ASM-HEMT model formulations are found to be sufficient to accurately model GaN Fin-JFET device behavior.

AB - In this paper, we analyse and precisely model the current-voltage (I-V) characteristics of Vertical GaN Fin-JFETs for operation temperatures of T= 25°C, 100°C and 200°C. To the authors' discernment, this marks the inaugural instance wherein a concise model for Gallium Nitride (GaN) Fin-Junction Field-Effect Transistors (Fin-JFETs) is introduced. We employ the ASM-HEMT model, an industry-standard, for the modelling of GaN Fin-JFETs. By modeling I-V behaviors at different temperatures the variations in mobility and threshold voltage with ambient temperatures is obtained. ASM-HEMT model formulations are found to be sufficient to accurately model GaN Fin-JFET device behavior.

UR - https://www.scopus.com/pages/publications/85189934601

U2 - 10.1109/TPEC60005.2024.10472194

DO - 10.1109/TPEC60005.2024.10472194

M3 - Conference proceeding contribution

AN - SCOPUS:85189934601

SN - 9798350331219

SP - 1

EP - 5

BT - 2024 IEEE Texas Power and Energy Conference (TPEC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2024 IEEE Texas Power and Energy Conference, TPEC 2024

Y2 - 12 February 2024 through 13 February 2024

ER -

Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model

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