Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model

D. Bavi, S. Khandelwal

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Fingerprint

Dive into the research topics of 'Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model'. Together they form a unique fingerprint.

Engineering & Materials Science