Compact models of negative-capacitance FinFETs: lumped and distributed charge models

Juan P. Duarte, Sourabh Khandelwal, Asif I. Khan, Angada Sachid, Yen-Kai Lin, Huan-Lin Chang, Sayeef Salahuddin, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

45 Citations (Scopus)

Abstract

This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.

Original languageEnglish
Title of host publication2016 International Electron Devices Meeting
Subtitle of host publicationtechnical digest
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages30.5.1-30.5.4
Number of pages4
ISBN (Electronic)9781509039029, 9781509039012
ISBN (Print)9781509039036
DOIs
Publication statusPublished - 2016
Externally publishedYes
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

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