Compact models of negative-capacitance FinFETs: lumped and distributed charge models

Juan P. Duarte; Sourabh Khandelwal; Asif I. Khan; Angada Sachid; Yen-Kai Lin; Huan-Lin Chang; Sayeef Salahuddin; Chenming Hu

doi:10.1109/IEDM.2016.7838514

Compact models of negative-capacitance FinFETs: lumped and distributed charge models

Juan P. Duarte, Sourabh Khandelwal, Asif I. Khan, Angada Sachid, Yen-Kai Lin, Huan-Lin Chang, Sayeef Salahuddin, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

66 Citations (Scopus)

Abstract

This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.

Original language	English
Title of host publication	2016 International Electron Devices Meeting
Subtitle of host publication	technical digest
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	30.5.1-30.5.4
Number of pages	4
ISBN (Electronic)	9781509039029, 9781509039012
ISBN (Print)	9781509039036
DOIs	https://doi.org/10.1109/IEDM.2016.7838514
Publication status	Published - 2016
Externally published	Yes
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Other

Other	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838514

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Duarte, J. P., Khandelwal, S., Khan, A. I., Sachid, A., Lin, Y.-K., Chang, H.-L., Salahuddin, S., & Hu, C. (2016). Compact models of negative-capacitance FinFETs: lumped and distributed charge models. In 2016 International Electron Devices Meeting: technical digest (pp. 30.5.1-30.5.4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM.2016.7838514

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title = "Compact models of negative-capacitance FinFETs: lumped and distributed charge models",

abstract = "This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.",

author = "Duarte, {Juan P.} and Sourabh Khandelwal and Khan, {Asif I.} and Angada Sachid and Yen-Kai Lin and Huan-Lin Chang and Sayeef Salahuddin and Chenming Hu",

year = "2016",

doi = "10.1109/IEDM.2016.7838514",

language = "English",

isbn = "9781509039036",

pages = "30.5.1--30.5.4",

booktitle = "2016 International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",

}

Duarte, JP, Khandelwal, S, Khan, AI, Sachid, A, Lin, Y-K, Chang, H-L, Salahuddin, S & Hu, C 2016, Compact models of negative-capacitance FinFETs: lumped and distributed charge models. in 2016 International Electron Devices Meeting: technical digest. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 30.5.1-30.5.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838514

Compact models of negative-capacitance FinFETs: lumped and distributed charge models. / Duarte, Juan P.; Khandelwal, Sourabh; Khan, Asif I. et al.
2016 International Electron Devices Meeting: technical digest. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 30.5.1-30.5.4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - Compact models of negative-capacitance FinFETs

T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016

AU - Duarte, Juan P.

AU - Khandelwal, Sourabh

AU - Khan, Asif I.

AU - Sachid, Angada

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AU - Salahuddin, Sayeef

AU - Hu, Chenming

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N2 - This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.

AB - This work presents insights into the device physics and behaviors of ferroelectric based negative capacitance FinFETs (NC-FinFETs) by proposing lumped and distributed compact models for its simulation. NC-FinFET may have a floating metal between ferroelectric (FE) and the dielectric layers and the lumped charge model represents such a device. For a NC-FinFET without a floating metal, the distributed charge model should be used and at each point in the channel the ferroelectric layer will impact the local channel charge. This distributed effect has important implications on device characteristics as shown in this paper. The proposed compact models have been implemented in circuit simulators for exploring circuits based on NC-FinFET technology.

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CY - Piscataway, NJ

Y2 - 3 December 2016 through 7 December 2016

ER -

Compact models of negative-capacitance FinFETs: lumped and distributed charge models

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