Compact On-Chip Bandpass Filter with Improved In-band Flatness and Stopband Attenuation in 0.13- μm (Bi)-CMOS Technology

Yang Yang, Hang Liu, Zhang Ju Hou, Xi Zhu, Eryk Dutkiewicz, Quan Xue

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In this letter, an on-chip miniaturized bandpass filter (BPF) is presented, which is based on a grounded center-tapped ring resonator (CTRR) with shunt capacitive loading. To analyze the principle of this design, a simple but effective equivalent circuit model is provided. Using this model, it is easy to show that the CTRR-based approach has a potential to generate two transmission poles within the passband. Compared with the conventional single-pole-based approach, this dual-pole design not only possesses a flexibility of controlling the passband width, but also has better flatness of insertion loss in the passband. In addition, this approach is able to significantly improve the stopband performance. To further demonstrate the feasibility of this approach in practice, the structure is implemented and fabricated in a commercial 0.13- μm (Bi)-CMOS SiGe technology. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 42.4%. The minimum insertion loss is 2.6 dB, while the stopband rejection is maintained to be better than 20 dB beyond 58 GHz. The chip, excluding the pads, is very compact at only 0.03 mm2 ( 0.11×0.28 mm 2).

Original languageEnglish
Pages (from-to)1359 - 1362
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number10
DOIs
Publication statusPublished - Oct 2017
Externally publishedYes

Keywords

  • Band-pass filters
  • bandpass filter (BPF)
  • Bi-CMOS
  • Capacitance
  • Insertion loss
  • Integrated circuit modeling
  • millimeter-wave
  • miniaturization
  • on-chip resonator
  • Passband
  • Resonator filters
  • RFIC
  • Silicon-Germanium (SiGe)
  • System-on-chip

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