Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

F. M. Yigletu; B. Iniguez; S. Khandelwal; T. A. Fjeldly

doi:10.1109/SISPAD.2013.6650626

Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

F. M. Yigletu, B. Iniguez, S. Khandelwal, T. A. Fjeldly

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

Abstract

This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain capacitances are then obtained through differentiation of the gate charge at the corresponding terminal voltages. Excellent agreements between the modeled and measured C-V characteristics of a device were obtained.

Original language	English
Title of host publication	18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Subtitle of host publication	SISPAD 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	268-271
Number of pages	4
ISBN (Print)	9781467357364
DOIs	https://doi.org/10.1109/SISPAD.2013.6650626
Publication status	Published - 2013
Externally published	Yes
Event	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom Duration: 3 Sept 2013 → 5 Sept 2013

Other

Other	18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Country/Territory	United Kingdom
City	Glasgow
Period	3/09/13 → 5/09/13

Keywords

HEMTs
Power Amplifiers
power transistors
Semiconductor Device Modeling
Simulation

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10.1109/SISPAD.2013.6650626

Cite this

Yigletu, F. M., Iniguez, B., Khandelwal, S., & Fjeldly, T. A. (2013). Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. In 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): SISPAD 2013 (pp. 268-271). Article 6650626 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SISPAD.2013.6650626

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title = "Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs",

abstract = "This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain capacitances are then obtained through differentiation of the gate charge at the corresponding terminal voltages. Excellent agreements between the modeled and measured C-V characteristics of a device were obtained.",

keywords = "HEMTs, Power Amplifiers, power transistors, Semiconductor Device Modeling, Simulation",

author = "Yigletu, {F. M.} and B. Iniguez and S. Khandelwal and Fjeldly, {T. A.}",

year = "2013",

doi = "10.1109/SISPAD.2013.6650626",

language = "English",

isbn = "9781467357364",

pages = "268--271",

booktitle = "18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 ; Conference date: 03-09-2013 Through 05-09-2013",

}

Yigletu, FM, Iniguez, B, Khandelwal, S & Fjeldly, TA 2013, Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. in 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): SISPAD 2013., 6650626, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 268-271, 18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013, Glasgow, United Kingdom, 3/09/13. https://doi.org/10.1109/SISPAD.2013.6650626

Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. / Yigletu, F. M.; Iniguez, B.; Khandelwal, S. et al.
18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): SISPAD 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 268-271 6650626.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

AU - Yigletu, F. M.

AU - Iniguez, B.

AU - Khandelwal, S.

AU - Fjeldly, T. A.

PY - 2013

Y1 - 2013

N2 - This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain capacitances are then obtained through differentiation of the gate charge at the corresponding terminal voltages. Excellent agreements between the modeled and measured C-V characteristics of a device were obtained.

AB - This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain capacitances are then obtained through differentiation of the gate charge at the corresponding terminal voltages. Excellent agreements between the modeled and measured C-V characteristics of a device were obtained.

KW - HEMTs

KW - Power Amplifiers

KW - power transistors

KW - Semiconductor Device Modeling

KW - Simulation

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U2 - 10.1109/SISPAD.2013.6650626

DO - 10.1109/SISPAD.2013.6650626

M3 - Conference proceeding contribution

AN - SCOPUS:84891110224

SN - 9781467357364

SP - 268

EP - 271

BT - 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

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Y2 - 3 September 2013 through 5 September 2013

ER -

Yigletu FM, Iniguez B, Khandelwal S, Fjeldly TA. Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. In 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): SISPAD 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 268-271. 6650626 doi: 10.1109/SISPAD.2013.6650626

Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

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