Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs

F. M. Yigletu, B. Iniguez, S. Khandelwal, T. A. Fjeldly

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain capacitances are then obtained through differentiation of the gate charge at the corresponding terminal voltages. Excellent agreements between the modeled and measured C-V characteristics of a device were obtained.

Original languageEnglish
Title of host publication18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Subtitle of host publicationSISPAD 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages268-271
Number of pages4
ISBN (Print)9781467357364
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 3 Sep 20135 Sep 2013

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period3/09/135/09/13

Keywords

  • HEMTs
  • Power Amplifiers
  • power transistors
  • Semiconductor Device Modeling
  • Simulation

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  • Cite this

    Yigletu, F. M., Iniguez, B., Khandelwal, S., & Fjeldly, T. A. (2013). Compact physical models for gate charge and gate capacitances of AlGaN/GaN HEMTs. In 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): SISPAD 2013 (pp. 268-271). [6650626] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SISPAD.2013.6650626