Compact SEPIC converter using a GaN HEMT

Z. Saif, V. Ahmad, G. E. Town

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25%.

Original languageEnglish
Title of host publication2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages2249-2254
Number of pages6
ISBN (Electronic)9788957082546
ISBN (Print)9781479988006
DOIs
Publication statusPublished - Jun 2015
Event9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of
Duration: 1 Jun 20155 Jun 2015

Other

Other9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
CountryKorea, Republic of
CitySeoul
Period1/06/155/06/15

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