Compact SEPIC converter using a GaN HEMT

Z. Saif; V. Ahmad; G. E. Town

doi:10.1109/ICPE.2015.7168089

Compact SEPIC converter using a GaN HEMT

Z. Saif, V. Ahmad, G. E. Town

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25%.

Original language	English
Title of host publication	2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	2249-2254
Number of pages	6
ISBN (Electronic)	9788957082546
ISBN (Print)	9781479988006
DOIs	https://doi.org/10.1109/ICPE.2015.7168089
Publication status	Published - Jun 2015
Event	9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of Duration: 1 Jun 2015 → 5 Jun 2015

Other

Other	9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
Country/Territory	Korea, Republic of
City	Seoul
Period	1/06/15 → 5/06/15

Access to Document

10.1109/ICPE.2015.7168089

Cite this

@inproceedings{56e4ef8eb10645ada2888be181173d21,

title = "Compact SEPIC converter using a GaN HEMT",

abstract = "The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25\%.",

author = "Z. Saif and V. Ahmad and Town, \{G. E.\}",

year = "2015",

month = jun,

doi = "10.1109/ICPE.2015.7168089",

language = "English",

isbn = "9781479988006",

pages = "2249--2254",

booktitle = "2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia ; Conference date: 01-06-2015 Through 05-06-2015",

}

Saif, Z, Ahmad, V & Town, GE 2015, Compact SEPIC converter using a GaN HEMT. in 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) ., 7168089, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 2249-2254, 9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia, Seoul, Korea, Republic of, 1/06/15. https://doi.org/10.1109/ICPE.2015.7168089

Compact SEPIC converter using a GaN HEMT. / Saif, Z.; Ahmad, V.; Town, G. E.
2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015) . Piscataway, N.J.: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 2249-2254 7168089.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Compact SEPIC converter using a GaN HEMT

AU - Saif, Z.

AU - Ahmad, V.

AU - Town, G. E.

PY - 2015/6

Y1 - 2015/6

N2 - The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25%.

AB - The increasing demand for miniaturization in electronic devices has driven the design of compact power supplies which operate at higher switching frequencies. Gallium-nitride semiconductor switching devices are very promising for increasing the power density and efficiency of switch-mode power converters due to their high switching speed and low on-resistance relative to silicon devices. In this paper we describe a simple SEPIC converter using a normally-off hybrid GaN-on-Si cascode switch. Operating with a switching frequency around 1.5MHz, and with 100W load, the compact circuit was measured to have a conversion efficiency of 94.25%.

UR - https://www.scopus.com/pages/publications/84961864441

U2 - 10.1109/ICPE.2015.7168089

DO - 10.1109/ICPE.2015.7168089

M3 - Conference proceeding contribution

AN - SCOPUS:84961864441

SN - 9781479988006

SP - 2249

EP - 2254

BT - 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, N.J.

T2 - 9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia

Y2 - 1 June 2015 through 5 June 2015

ER -

Compact SEPIC converter using a GaN HEMT

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this