Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process

A. Bessemoulin; M. Rodriguez; J. Tarazi; G. McCulloch; A. E. Parker; S. J. Mahon

doi:10.1109/CSICS.2015.7314493

Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process

A. Bessemoulin, M. Rodriguez, J. Tarazi, G. McCulloch, A. E. Parker, S. J. Mahon

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

18 Citations (Scopus)

Abstract

The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a commercially available 0.1-μm GaAs PHEMT technology. Thanks to efficient design approaches, the 3.5-mm² power amplifier demonstrates a measured linear gain of more than 12 dB, and a saturated output power P_sat of +24.5 dBm (280 mW) across the 80-100 GHz band. The driver and medium power amplifiers deliver at 92-96 GHz more than +20.5 dBm (>100 mW) and +23 dBm (200 mW), in chip sizes of less than 0.97 mm2 (0.25 mm² for the core amplifier) and 1.95 mm² respectively. These power densities and measured performance at W-band compare favorably to other GaAs MMICs, and more advanced solutions using InP HBTs or GaN HEMTs reported in the literature. Furthermore, the presented design considerations can be applied to reduce manufacturing cost in other circuits and technologies.

Original language	English
Title of host publication	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Editors	M.K. Radhakrishnan
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781479984947
ISBN (Print)	9781479984930
DOIs	https://doi.org/10.1109/CSICS.2015.7314493
Publication status	Published - 30 Oct 2015
Event	37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States Duration: 11 Oct 2015 → 14 Oct 2015

Publication series

Name	IEEE Compound Semiconductor Integrated Circuits Symposium
Publisher	IEEE
ISSN (Print)	2162-7940

Other

Other	37th IEEE International Symposium on Workload Characterization, IISWC 2015
Country/Territory	United States
City	New Orleans
Period	11/10/15 → 14/10/15

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10.1109/CSICS.2015.7314493

Cite this

Bessemoulin, A., Rodriguez, M., Tarazi, J., McCulloch, G., Parker, A. E., & Mahon, S. J. (2015). Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process. In M. K. Radhakrishnan (Ed.), 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 (pp. 1-4). Article 7314493 (IEEE Compound Semiconductor Integrated Circuits Symposium). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CSICS.2015.7314493

Bessemoulin, A. ; Rodriguez, M. ; Tarazi, J. et al. / Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. editor / M.K. Radhakrishnan. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2015. pp. 1-4 (IEEE Compound Semiconductor Integrated Circuits Symposium).

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abstract = "The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a commercially available 0.1-μm GaAs PHEMT technology. Thanks to efficient design approaches, the 3.5-mm2 power amplifier demonstrates a measured linear gain of more than 12 dB, and a saturated output power Psat of +24.5 dBm (280 mW) across the 80-100 GHz band. The driver and medium power amplifiers deliver at 92-96 GHz more than +20.5 dBm (>100 mW) and +23 dBm (200 mW), in chip sizes of less than 0.97 mm2 (0.25 mm2 for the core amplifier) and 1.95 mm2 respectively. These power densities and measured performance at W-band compare favorably to other GaAs MMICs, and more advanced solutions using InP HBTs or GaN HEMTs reported in the literature. Furthermore, the presented design considerations can be applied to reduce manufacturing cost in other circuits and technologies.",

author = "A. Bessemoulin and M. Rodriguez and J. Tarazi and G. McCulloch and Parker, {A. E.} and Mahon, {S. J.}",

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Bessemoulin, A, Rodriguez, M, Tarazi, J, McCulloch, G, Parker, AE & Mahon, SJ 2015, Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process. in MK Radhakrishnan (ed.), 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015., 7314493, IEEE Compound Semiconductor Integrated Circuits Symposium, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 37th IEEE International Symposium on Workload Characterization, IISWC 2015, New Orleans, United States, 11/10/15. https://doi.org/10.1109/CSICS.2015.7314493

Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process. / Bessemoulin, A.; Rodriguez, M.; Tarazi, J. et al.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. ed. / M.K. Radhakrishnan. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-4 7314493 (IEEE Compound Semiconductor Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Bessemoulin, A.

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AU - Parker, A. E.

AU - Mahon, S. J.

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N2 - The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a commercially available 0.1-μm GaAs PHEMT technology. Thanks to efficient design approaches, the 3.5-mm2 power amplifier demonstrates a measured linear gain of more than 12 dB, and a saturated output power Psat of +24.5 dBm (280 mW) across the 80-100 GHz band. The driver and medium power amplifiers deliver at 92-96 GHz more than +20.5 dBm (>100 mW) and +23 dBm (200 mW), in chip sizes of less than 0.97 mm2 (0.25 mm2 for the core amplifier) and 1.95 mm2 respectively. These power densities and measured performance at W-band compare favorably to other GaAs MMICs, and more advanced solutions using InP HBTs or GaN HEMTs reported in the literature. Furthermore, the presented design considerations can be applied to reduce manufacturing cost in other circuits and technologies.

AB - The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a commercially available 0.1-μm GaAs PHEMT technology. Thanks to efficient design approaches, the 3.5-mm2 power amplifier demonstrates a measured linear gain of more than 12 dB, and a saturated output power Psat of +24.5 dBm (280 mW) across the 80-100 GHz band. The driver and medium power amplifiers deliver at 92-96 GHz more than +20.5 dBm (>100 mW) and +23 dBm (200 mW), in chip sizes of less than 0.97 mm2 (0.25 mm2 for the core amplifier) and 1.95 mm2 respectively. These power densities and measured performance at W-band compare favorably to other GaAs MMICs, and more advanced solutions using InP HBTs or GaN HEMTs reported in the literature. Furthermore, the presented design considerations can be applied to reduce manufacturing cost in other circuits and technologies.

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Bessemoulin A, Rodriguez M, Tarazi J, McCulloch G, Parker AE, Mahon SJ. Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process. In Radhakrishnan MK, editor, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2015. p. 1-4. 7314493. (IEEE Compound Semiconductor Integrated Circuits Symposium). doi: 10.1109/CSICS.2015.7314493

Compact W-Band PA MMICs in Commercially Available 0.1-μm GaAs PHEMT Process

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