Compensation mechanisms in magnesium doped GaN

M. Godlewski*, H. Przybylińska, R. Bozek, E. M. Goldys, J. P. Bergman, B. Monemar, I. Grzegory, S. Porowski

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples, from Kelvin probe atomic force microscopy measurements. Large- and small-scale light emission fluctuations are also demonstrated. Microphotoluminescence (PL) study indicates an unusual anti-correlation between the intensities of excitonic and defect-related emission processes in p-type doped structures and also the presence of the so-called hot-PL. Hot-PL observed in compensated p-type samples, we relate to the presence of strong potential fluctuations.

    Original languageEnglish
    Pages (from-to)216-220
    Number of pages5
    JournalPhysica Status Solidi (A) Applied Research
    Issue number2
    Publication statusPublished - Jan 2004


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