Compensation mechanisms in magnesium doped GaN

M. Godlewski*, H. Przybylińska, R. Bozek, E. M. Goldys, J. P. Bergman, B. Monemar, I. Grzegory, S. Porowski

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples, from Kelvin probe atomic force microscopy measurements. Large- and small-scale light emission fluctuations are also demonstrated. Microphotoluminescence (PL) study indicates an unusual anti-correlation between the intensities of excitonic and defect-related emission processes in p-type doped structures and also the presence of the so-called hot-PL. Hot-PL observed in compensated p-type samples, we relate to the presence of strong potential fluctuations.

Original languageEnglish
Pages (from-to)216-220
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number2
Publication statusPublished - Jan 2004

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