Confined epitaxial growth by low-pressure chemical vapor deposition

K. Osman; N. S. Lloyd; J. M. Bonar; H. A. Kemhadjian; D. M. Bagnall; J. S. Hamel

doi:10.1023/A:1023995005560

Confined epitaxial growth by low-pressure chemical vapor deposition

K. Osman^*, N. S. Lloyd, J. M. Bonar, H. A. Kemhadjian, D. M. Bagnall, J. S. Hamel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Confined and unconfined selective epitaxial growth using SiH₄ and a novel DCS/SiH₄/H₂ mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH₄/H₂ growth with a DCS/H₂ prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH₄/H₂ process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.

Original language	English
Pages (from-to)	257-260
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	14
Issue number	5-7
DOIs	https://doi.org/10.1023/A:1023995005560
Publication status	Published - May 2003
Externally published	Yes

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title = "Confined epitaxial growth by low-pressure chemical vapor deposition",

abstract = "Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SiH4/H2 mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.",

author = "K. Osman and Lloyd, {N. S.} and Bonar, {J. M.} and Kemhadjian, {H. A.} and Bagnall, {D. M.} and Hamel, {J. S.}",

year = "2003",

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doi = "10.1023/A:1023995005560",

language = "English",

volume = "14",

pages = "257--260",

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T1 - Confined epitaxial growth by low-pressure chemical vapor deposition

AU - Osman, K.

AU - Lloyd, N. S.

AU - Bonar, J. M.

AU - Kemhadjian, H. A.

AU - Bagnall, D. M.

AU - Hamel, J. S.

PY - 2003/5

Y1 - 2003/5

N2 - Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SiH4/H2 mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.

AB - Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SiH4/H2 mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.

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AN - SCOPUS:0037811434

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SP - 257

EP - 260

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5-7

ER -

Confined epitaxial growth by low-pressure chemical vapor deposition

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