Confined epitaxial growth by low-pressure chemical vapor deposition

K. Osman*, N. S. Lloyd, J. M. Bonar, H. A. Kemhadjian, D. M. Bagnall, J. S. Hamel

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Confined and unconfined selective epitaxial growth using SiH4 and a novel DCS/SiH4/H2 mixture by low-pressure chemical vapor deposition (LPCVD) have been studied. Results indicate that DCS/SiH4/H2 growth with a DCS/H2 prebake provides a very suitable process for confined growth, providing both good epitaxial quality and selectivity. Results also show that unconfined and confined growth using the DCS/SiH4/H2 process gives similar growth in terms of growth rate and faceting. Thickness uniformity was also found to be good in areas away from the wafer edge, and no loading effects were observed.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume14
Issue number5-7
DOIs
Publication statusPublished - May 2003
Externally publishedYes

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