Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping

Jason Hodges, Dirk Schwantuschke, Friedbert van Raay, Peter Brückner, Rüdiger Quay, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also changes the C-V behaviour of the device. In this paper, for the first time, we present a physics-based compact model which captures the I-V and the C-V characteristics of the device in presence of trapping effects consistently with I-V and C-V modelled using the same set of model formulations and physical model parameters. The developed model shows excellent agreement to the measured data. The importance of a consistent I-V and C-V model is also shown.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages603-606
Number of pages4
ISBN (Electronic)9781728113098
ISBN (Print)9781728113104
DOIs
Publication statusPublished - 2019
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: 2 Jun 20197 Jun 2019

Publication series

Name
ISSN (Print)0149-645X
ISSN (Electronic)2576-7216

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period2/06/197/06/19

Keywords

  • Gallium-nitride (GaN)
  • high electron mobility transistor (HEMT)
  • charge trapping
  • pulsed I-V
  • pulsed S-parameters

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