@inproceedings{4c5b58c78b4d49948afff7d5f0aeea3f,
title = "Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping",
abstract = "Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also changes the C-V behaviour of the device. In this paper, for the first time, we present a physics-based compact model which captures the I-V and the C-V characteristics of the device in presence of trapping effects consistently with I-V and C-V modelled using the same set of model formulations and physical model parameters. The developed model shows excellent agreement to the measured data. The importance of a consistent I-V and C-V model is also shown.",
keywords = "Gallium-nitride (GaN), high electron mobility transistor (HEMT), charge trapping, pulsed I-V, pulsed S-parameters",
author = "Jason Hodges and Dirk Schwantuschke and Raay, {Friedbert van} and Peter Br{\"u}ckner and R{\"u}diger Quay and Sourabh Khandelwal",
year = "2019",
doi = "10.1109/MWSYM.2019.8700738",
language = "English",
isbn = "9781728113104",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "603--606",
booktitle = "2019 IEEE MTT-S International Microwave Symposium (IMS)",
address = "United States",
note = "2019 IEEE MTT-S International Microwave Symposium, IMS 2019 ; Conference date: 02-06-2019 Through 07-06-2019",
}