Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping

Jason Hodges, Dirk Schwantuschke, Friedbert van Raay, Peter Brückner, Rüdiger Quay, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)

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