Contact limitation of secondary photoconductivity in intrinsic a-Si:H

N. Kopidakis*, P. Tzanetakis, P. Stradins, H. Fritzsche

*Corresponding author for this work

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3 Citations (Scopus)

Abstract

A requirement for secondary photoconductivity is that the supply of current by the contacts is sufficient to keep the photoconductor neutral. This requirement is not fulfilled under most experimental conditions in intrinsic a-Si:H at and below 300 K. We find a positive space charge and a large voltage drop near the cathode which yield a subohmic photoconductivity in the range of thermal quenching at applied fields in excess of 100 V/cm. The onset of the subohmic region moves to larger fields with light soaking.

Original languageEnglish
Pages (from-to)201-205
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 1
Publication statusPublished - May 1998
Externally publishedYes

Keywords

  • a-Si:H
  • Contacts
  • Photoconductivity

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  • Cite this

    Kopidakis, N., Tzanetakis, P., Stradins, P., & Fritzsche, H. (1998). Contact limitation of secondary photoconductivity in intrinsic a-Si:H. Journal of Non-Crystalline Solids, 227-230(PART 1), 201-205.