Contribution of self heating to intermodulation in FETs

Anthony E. Parker*, James G. Rathmell

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Self heating gives microwave FETs a temperature response to power dissipation. This is shown to be significant at high-frequency signal rates, even though the apparent time constant of heating is a few kilohertz. Self heating causes variation in intermodulation with frequency spacing and the extent of this variation is linked to bias. The frequency response of the heating process can be characterized from third-order intermodulation versus frequency spacing.

Original languageEnglish
Pages (from-to)803-806
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 2004

Keywords

  • Intermodulation
  • Memory effect
  • Microwave FET
  • Self heating
  • Thermal response

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