Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

E. M. Goldys, M. Godlewski, E. Kaminski, A. Piotrowska, G. Koley, M. G. Spencer, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages539-542
Number of pages4
Volume2000-January
ISBN (Print)0780366980
DOIs
Publication statusPublished - 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
CountryAustralia
CityBundoora
Period6/12/008/12/00

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