Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

E. M. Goldys; M. Godlewski; E. Kaminski; A. Piotrowska; G. Koley; M. G. Spencer; L. F. Eastman

doi:10.1109/COMMAD.2000.1023006

Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

E. M. Goldys, M. Godlewski, E. Kaminski, A. Piotrowska, G. Koley, M. G. Spencer, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	539-542
Number of pages	4
Volume	2000-January
ISBN (Print)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1023006
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Access to Document

10.1109/COMMAD.2000.1023006

Cite this

Goldys, E. M., Godlewski, M., Kaminski, E., Piotrowska, A., Koley, G., Spencer, M. G., & Eastman, L. F. (2000). Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 539-542). [1023006] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1023006

Goldys, E. M. ; Godlewski, M. ; Kaminski, E. ; Piotrowska, A. ; Koley, G. ; Spencer, M. G. ; Eastman, L. F. / Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 539-542

@inproceedings{6a9dba2f0c1a47b88cf9ce2aee8cc940,

title = "Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN",

abstract = "We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.",

author = "Goldys, {E. M.} and M. Godlewski and E. Kaminski and A. Piotrowska and G. Koley and Spencer, {M. G.} and Eastman, {L. F.}",

year = "2000",

doi = "10.1109/COMMAD.2000.1023006",

language = "English",

isbn = "0780366980 ",

volume = "2000-January",

pages = "539--542",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

}

Goldys, EM, Godlewski, M, Kaminski, E, Piotrowska, A, Koley, G, Spencer, MG & Eastman, LF 2000, Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. in COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1023006, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 539-542, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1023006

Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. / Goldys, E. M.; Godlewski, M.; Kaminski, E.; Piotrowska, A.; Koley, G.; Spencer, M. G.; Eastman, L. F.

COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 539-542 1023006.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

AU - Goldys, E. M.

AU - Godlewski, M.

AU - Kaminski, E.

AU - Piotrowska, A.

AU - Koley, G.

AU - Spencer, M. G.

AU - Eastman, L. F.

PY - 2000

Y1 - 2000

N2 - We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.

AB - We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.

UR - http://www.scopus.com/inward/record.url?scp=84949742351&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2000.1023006

DO - 10.1109/COMMAD.2000.1023006

M3 - Conference proceeding contribution

AN - SCOPUS:84949742351

SN - 0780366980

VL - 2000-January

SP - 539

EP - 542

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Goldys EM, Godlewski M, Kaminski E, Piotrowska A, Koley G, Spencer MG et al. Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN. In COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 539-542. 1023006 https://doi.org/10.1109/COMMAD.2000.1023006

Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this