Abstract
In recent years integrated waveguide devices have emerged as an attractive platform for scalable quantum tech- nologies. In contrast to earlier free-space investigations, one must consider additional effects induced by the media. In amorphous materials, spontaneous Raman scattered photons act as a noise source. In crystalline materials two-photon absorption (TPA) and free carrier absorption (FCA) are present at large intensities. While initial observations noted TPA affected experiments in integrated semiconductor devices, at present the nuanced roles of these processes in the quantum regime is unclear. Here, using single photons generated via spontaneous four-wave mixing (SFWM) in silicon, we experimentally demonstrate that cross-TPA (XTPA) between a classical pump beam and generated single photons imposes an intrinsic limit on heralded single photon generation, even in the single pair regime. Our newly developed model is in excellent agreement with experimental results.
Original language | English |
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Title of host publication | Nonlinear Optics and Its Applications VIII and Quantum Optics III |
Editors | Benjamin J. Eggleton, Alexander L. Gaeta, Neil G. R. Broderick, Alexander V. Sergienko, Arno Rauschenbeutel, Thomas Durt |
Place of Publication | Washington, DC |
Publisher | SPIE |
Pages | 1-13 |
Number of pages | 13 |
ISBN (Electronic) | 9781628410846 |
DOIs | |
Publication status | Published - 2014 |
Externally published | Yes |
Event | Nonlinear Optics and Its Applications VIII; and Quantum Optics III - Brussels, Belgium Duration: 14 Apr 2014 → 16 Apr 2014 |
Other
Other | Nonlinear Optics and Its Applications VIII; and Quantum Optics III |
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Country | Belgium |
City | Brussels |
Period | 14/04/14 → 16/04/14 |
Keywords
- Integrated photonics
- Nonlinear optics
- Photonic crystals
- Quantum information
- Quantum integrated photonics
- Silicon photonics
- Single photon sources
- Two photon absorption