Abstract
Measured dark I-V characteristics of multiquantum well nin structures with spacer layers are discussed. Detailed modelling shows the importance of nonuniform electric field attributed to potential barriers coincident with the spacers. The nonlinear I-V characteristics are controlled by the barrier height and by the resistive contribution to the barrier current.
Original language | English |
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Pages (from-to) | 2040-2041 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 23 |
DOIs | |
Publication status | Published - 9 Nov 1995 |
Keywords
- semiconductor quantum wells
- optical modulation