Measured dark I-V characteristics of multiquantum well nin structures with spacer layers are discussed. Detailed modelling shows the importance of nonuniform electric field attributed to potential barriers coincident with the spacers. The nonlinear I-V characteristics are controlled by the barrier height and by the resistive contribution to the barrier current.
|Number of pages||2|
|Publication status||Published - 9 Nov 1995|
- semiconductor quantum wells
- optical modulation