Current-voltage nonlinearity in the multiquantum well nin modulator structure

E. M. Goldys*, G. Nott, T. L. Tansley, M. Henini, M. A. Pate, G. Hill

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Measured dark I-V characteristics of multiquantum well nin structures with spacer layers are discussed. Detailed modelling shows the importance of nonuniform electric field attributed to potential barriers coincident with the spacers. The nonlinear I-V characteristics are controlled by the barrier height and by the resistive contribution to the barrier current.

Original languageEnglish
Pages (from-to)2040-2041
Number of pages2
JournalElectronics Letters
Volume31
Issue number23
DOIs
Publication statusPublished - 9 Nov 1995

Keywords

  • semiconductor quantum wells
  • optical modulation

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