TY - JOUR
T1 - Cu2ZnSnS4 thin film solar cell fabricated by magnetron sputtering and sulfurization
AU - Chen, Jian
AU - Yan, Chang
AU - Li, Wei
AU - Song, Ning
AU - Liu, Fangyang
AU - Huang, Shujuan
AU - Hao, Xiaojing
AU - Green, Martin A.
PY - 2014
Y1 - 2014
N2 - In this work, sulfurizing metal precursors prepared by magnetron sputtering was applied in Cu2ZnSnS4
(CZTS) thin film fabrication. Three precursor structures, namely
substrate/ Zn/(Cu&Sn), substrate/Zn/Cu/Sn/Cu and substrate/Zn/Sn/Cu,
were compared for their synthesized CZTS film quality. It is notable
that CZTS film made of the precursor structure of
substrate/Zn/(Cu&Sn) has the best film quality with no obvious voids
and biggest average grain size. When applying this precursor structure
into device fabrication, a working CZTS device with an efficiency of
2.26% was made. The impact of metal precursors on the structural
property of CZTS film were characterised by SEM, XRD, Raman and TEM.
Thick MoS2 interfacial layer (∼200nm) between
absorber and back Mo contact and ZnS formed in the front and back
absorber regions are the possible reasons limiting short-circuit current
and fill factor of the cell.
AB - In this work, sulfurizing metal precursors prepared by magnetron sputtering was applied in Cu2ZnSnS4
(CZTS) thin film fabrication. Three precursor structures, namely
substrate/ Zn/(Cu&Sn), substrate/Zn/Cu/Sn/Cu and substrate/Zn/Sn/Cu,
were compared for their synthesized CZTS film quality. It is notable
that CZTS film made of the precursor structure of
substrate/Zn/(Cu&Sn) has the best film quality with no obvious voids
and biggest average grain size. When applying this precursor structure
into device fabrication, a working CZTS device with an efficiency of
2.26% was made. The impact of metal precursors on the structural
property of CZTS film were characterised by SEM, XRD, Raman and TEM.
Thick MoS2 interfacial layer (∼200nm) between
absorber and back Mo contact and ZnS formed in the front and back
absorber regions are the possible reasons limiting short-circuit current
and fill factor of the cell.
UR - http://www.scopus.com/inward/record.url?scp=84897987858&partnerID=8YFLogxK
U2 - 10.1557/opl.2014.271
DO - 10.1557/opl.2014.271
M3 - Conference paper
AN - SCOPUS:84897987858
SN - 1946-4274
VL - 1638
SP - 57
EP - 65
JO - MRS Online Proceedings
JF - MRS Online Proceedings
T2 - 2013 MRS Fall Meeting
Y2 - 1 December 2013 through 6 December 2013
ER -