Cyclic thermal annealing on Ge/Si(100) epitaxial films grown by magnetron sputtering

Chemistry

• Epitaxial Film 93%
• Threading Dislocation 82%
• Magnetron Sputtering 76%
• Epitaxial Growth 53%
• Annealing 51%
• Dislocation Loop 40%
• Liquid Film 31%
• Thermal Expansion Coefficient 25%
• Solar Cell 18%
• Dissociation 15%
• Strain 15%
• Reduction 10%
• Surface 6%

Engineering & Materials Science

• Epitaxial films 100%
• Magnetron sputtering 87%
• Annealing 65%
• Epitaxial growth 61%
• Hot Temperature 31%
• Solar cells 23%
• Thermal expansion 22%
• Surface roughness 18%
• Fabrication 16%
• Substrates 15%
• Defects 15%
• Temperature 8%
• Costs 8%

Physics & Astronomy

• magnetron sputtering 55%
• annealing 39%
• plane strain 18%
• epitaxy 16%
• thermal expansion 14%
• roughness 13%
• dissociation 13%
• solar cells 12%
• fabrication 9%
• defects 9%
• coefficients 8%
• temperature 4%