Damage-induced effects in co-implanted LEC GaAs

M. C. Heimlich; R. J. Gutmann; D. Seielstad; D. Hou

Damage-induced effects in co-implanted LEC GaAs

M. C. Heimlich^*, R. J. Gutmann, D. Seielstad, D. Hou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

Photoinduced microwave reflectometry (PIMR) has been used to characterize trapping phenomena for a series of GaAs wafers with Si channel implants and either isovalent B or p-type Be co-implants. Both co-implanted species alter the near-surface photoconductance with the change much more pronounced for the Be co-implant. Above and below band gap optical excitations are used to obtain the photoconductivity induced in the channel and substrate, respectively. A statistical correlation between the two photoconductances is found to be enhanced by a light dose of B in the subchannel region, while a similar implant of Be decouples the two. A hypothesis compatible with the data is presented which incorporates electrically active, unannealed damage. This damage includes, but may not be limited to, gallium vacancies.

Original language	English
Title of host publication	Proceedings of the 6th Conference on Semi-Insulating III-V Materials
Editors	Arthur George Milnes, Carla J Miner
Place of Publication	Bristol, UK
Publisher	Adam Hilger
Pages	367-372
Number of pages	6
ISBN (Print)	0750300663
Publication status	Published - 1990
Externally published	Yes
Event	Proceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can Duration: 13 May 1990 → 16 May 1990

Other

Other	Proceedings of the 6th Conference on Semi-Insulating III-V Materials
City	Toronto, Ont, Can
Period	13/05/90 → 16/05/90

Cite this

@inproceedings{d5e8c68a6d8d405ea6e9e72d9029d0d2,

title = "Damage-induced effects in co-implanted LEC GaAs",

abstract = "Photoinduced microwave reflectometry (PIMR) has been used to characterize trapping phenomena for a series of GaAs wafers with Si channel implants and either isovalent B or p-type Be co-implants. Both co-implanted species alter the near-surface photoconductance with the change much more pronounced for the Be co-implant. Above and below band gap optical excitations are used to obtain the photoconductivity induced in the channel and substrate, respectively. A statistical correlation between the two photoconductances is found to be enhanced by a light dose of B in the subchannel region, while a similar implant of Be decouples the two. A hypothesis compatible with the data is presented which incorporates electrically active, unannealed damage. This damage includes, but may not be limited to, gallium vacancies.",

author = "Heimlich, {M. C.} and Gutmann, {R. J.} and D. Seielstad and D. Hou",

year = "1990",

language = "English",

isbn = "0750300663",

pages = "367--372",

editor = "Milnes, {Arthur George} and Miner, {Carla J }",

booktitle = "Proceedings of the 6th Conference on Semi-Insulating III-V Materials",

publisher = "Adam Hilger",

note = "Proceedings of the 6th Conference on Semi-Insulating III-V Materials ; Conference date: 13-05-1990 Through 16-05-1990",

}

Damage-induced effects in co-implanted LEC GaAs. / Heimlich, M. C.; Gutmann, R. J.; Seielstad, D. et al.
Proceedings of the 6th Conference on Semi-Insulating III-V Materials. ed. / Arthur George Milnes; Carla J Miner. Bristol, UK: Adam Hilger, 1990. p. 367-372.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Damage-induced effects in co-implanted LEC GaAs

AU - Heimlich, M. C.

AU - Gutmann, R. J.

AU - Seielstad, D.

AU - Hou, D.

PY - 1990

Y1 - 1990

N2 - Photoinduced microwave reflectometry (PIMR) has been used to characterize trapping phenomena for a series of GaAs wafers with Si channel implants and either isovalent B or p-type Be co-implants. Both co-implanted species alter the near-surface photoconductance with the change much more pronounced for the Be co-implant. Above and below band gap optical excitations are used to obtain the photoconductivity induced in the channel and substrate, respectively. A statistical correlation between the two photoconductances is found to be enhanced by a light dose of B in the subchannel region, while a similar implant of Be decouples the two. A hypothesis compatible with the data is presented which incorporates electrically active, unannealed damage. This damage includes, but may not be limited to, gallium vacancies.

AB - Photoinduced microwave reflectometry (PIMR) has been used to characterize trapping phenomena for a series of GaAs wafers with Si channel implants and either isovalent B or p-type Be co-implants. Both co-implanted species alter the near-surface photoconductance with the change much more pronounced for the Be co-implant. Above and below band gap optical excitations are used to obtain the photoconductivity induced in the channel and substrate, respectively. A statistical correlation between the two photoconductances is found to be enhanced by a light dose of B in the subchannel region, while a similar implant of Be decouples the two. A hypothesis compatible with the data is presented which incorporates electrically active, unannealed damage. This damage includes, but may not be limited to, gallium vacancies.

UR - http://www.scopus.com/inward/record.url?scp=0025578659&partnerID=8YFLogxK

M3 - Conference proceeding contribution

AN - SCOPUS:0025578659

SN - 0750300663

SP - 367

EP - 372

BT - Proceedings of the 6th Conference on Semi-Insulating III-V Materials

A2 - Milnes, Arthur George

A2 - Miner, Carla J

PB - Adam Hilger

CY - Bristol, UK

T2 - Proceedings of the 6th Conference on Semi-Insulating III-V Materials

Y2 - 13 May 1990 through 16 May 1990

ER -

Damage-induced effects in co-implanted LEC GaAs

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