Damage-induced effects in co-implanted LEC GaAs

M. C. Heimlich*, R. J. Gutmann, D. Seielstad, D. Hou

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review


Photoinduced microwave reflectometry (PIMR) has been used to characterize trapping phenomena for a series of GaAs wafers with Si channel implants and either isovalent B or p-type Be co-implants. Both co-implanted species alter the near-surface photoconductance with the change much more pronounced for the Be co-implant. Above and below band gap optical excitations are used to obtain the photoconductivity induced in the channel and substrate, respectively. A statistical correlation between the two photoconductances is found to be enhanced by a light dose of B in the subchannel region, while a similar implant of Be decouples the two. A hypothesis compatible with the data is presented which incorporates electrically active, unannealed damage. This damage includes, but may not be limited to, gallium vacancies.

Original languageEnglish
Title of host publicationProceedings of the 6th Conference on Semi-Insulating III-V Materials
EditorsArthur George Milnes, Carla J Miner
Place of PublicationBristol, UK
PublisherAdam Hilger
Number of pages6
ISBN (Print)0750300663
Publication statusPublished - 1990
Externally publishedYes
EventProceedings of the 6th Conference on Semi-Insulating III-V Materials - Toronto, Ont, Can
Duration: 13 May 199016 May 1990


OtherProceedings of the 6th Conference on Semi-Insulating III-V Materials
CityToronto, Ont, Can


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