(Dark line defects, bright line lasers)‐microscopic studies of single‐shot lasing in CdSe quantum wells

K. P. O'Donnell, D. M. Bagnall, P. J. Wright, B. Cockayne

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A preliminary report on single quantum well (SQW) lasers of CdSe grown by metalorganic vapour phase epitaxy (MOVPE) in a matrix of ZnSe is presented. The total device thickness is 3 μm. The quantum wells are „ultrathin” in the range from 0.5 to 2 monolayers (ML). The time‐integrated spectra of spontaneous emission from the top surface of as‐grown samples are compared with spontaneous and stimulated edge emission from cleaved laser cavities. Such temporally and spatially integrated spectra are contrasted with single‐shot laser spectra obtained by adapting a 1 m single monochromator to operate as a videospectrograph. In addition to „hidden” mode structure, the spectrograms reveal the strongly heterogeneous character of laser emission from these samples: bright lines that indicate materials of good quality are found adjacent to dark lines where the emission is weak or absent.

LanguageEnglish
Pages451-456
Number of pages6
Journalphysica status solidi (b)
Volume187
Issue number2
DOIs
Publication statusPublished - 1 Feb 1995
Externally publishedYes

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Semiconductor quantum wells
shot
lasing
quantum wells
Quantum well lasers
Defects
Metallorganic vapor phase epitaxy
Monochromators
Lasers
Laser resonators
Spontaneous emission
defects
lasers
Monolayers
spectrograms
quantum well lasers
monochromators
laser cavities
vapor phase epitaxy
spontaneous emission

Cite this

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title = "(Dark line defects, bright line lasers)‐microscopic studies of single‐shot lasing in CdSe quantum wells",
abstract = "A preliminary report on single quantum well (SQW) lasers of CdSe grown by metalorganic vapour phase epitaxy (MOVPE) in a matrix of ZnSe is presented. The total device thickness is 3 μm. The quantum wells are „ultrathin” in the range from 0.5 to 2 monolayers (ML). The time‐integrated spectra of spontaneous emission from the top surface of as‐grown samples are compared with spontaneous and stimulated edge emission from cleaved laser cavities. Such temporally and spatially integrated spectra are contrasted with single‐shot laser spectra obtained by adapting a 1 m single monochromator to operate as a videospectrograph. In addition to „hidden” mode structure, the spectrograms reveal the strongly heterogeneous character of laser emission from these samples: bright lines that indicate materials of good quality are found adjacent to dark lines where the emission is weak or absent.",
author = "O'Donnell, {K. P.} and Bagnall, {D. M.} and Wright, {P. J.} and B. Cockayne",
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(Dark line defects, bright line lasers)‐microscopic studies of single‐shot lasing in CdSe quantum wells. / O'Donnell, K. P.; Bagnall, D. M.; Wright, P. J.; Cockayne, B.

In: physica status solidi (b), Vol. 187, No. 2, 01.02.1995, p. 451-456.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - (Dark line defects, bright line lasers)‐microscopic studies of single‐shot lasing in CdSe quantum wells

AU - O'Donnell, K. P.

AU - Bagnall, D. M.

AU - Wright, P. J.

AU - Cockayne, B.

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AB - A preliminary report on single quantum well (SQW) lasers of CdSe grown by metalorganic vapour phase epitaxy (MOVPE) in a matrix of ZnSe is presented. The total device thickness is 3 μm. The quantum wells are „ultrathin” in the range from 0.5 to 2 monolayers (ML). The time‐integrated spectra of spontaneous emission from the top surface of as‐grown samples are compared with spontaneous and stimulated edge emission from cleaved laser cavities. Such temporally and spatially integrated spectra are contrasted with single‐shot laser spectra obtained by adapting a 1 m single monochromator to operate as a videospectrograph. In addition to „hidden” mode structure, the spectrograms reveal the strongly heterogeneous character of laser emission from these samples: bright lines that indicate materials of good quality are found adjacent to dark lines where the emission is weak or absent.

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