DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Qi Cheng; Kazy Shariar; Sourabh Khandelwal; Yuping Zeng

doi:10.1016/j.sse.2019.05.001

DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Qi Cheng, Kazy Shariar, Sourabh Khandelwal, Yuping Zeng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

Original language	English
Pages (from-to)	11-15
Number of pages	5
Journal	Solid-State Electronics
Volume	158
DOIs	https://doi.org/10.1016/j.sse.2019.05.001
Publication status	Published - Aug 2019
Externally published	Yes

Keywords

InAs
MOSFET simulation
XOI transistor
RF/DC simulation

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10.1016/j.sse.2019.05.001

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title = "DC and RF performances of InAs FinFET and GAA MOSFET on insulator",

abstract = "This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.",

keywords = "InAs, MOSFET simulation, XOI transistor, RF/DC simulation",

author = "Qi Cheng and Kazy Shariar and Sourabh Khandelwal and Yuping Zeng",

year = "2019",

month = aug,

doi = "10.1016/j.sse.2019.05.001",

language = "English",

volume = "158",

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journal = "Solid-State Electronics",

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T1 - DC and RF performances of InAs FinFET and GAA MOSFET on insulator

AU - Cheng, Qi

AU - Shariar, Kazy

AU - Khandelwal, Sourabh

AU - Zeng, Yuping

PY - 2019/8

Y1 - 2019/8

N2 - This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

AB - This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

KW - InAs

KW - MOSFET simulation

KW - XOI transistor

KW - RF/DC simulation

UR - http://www.scopus.com/inward/record.url?scp=85065547733&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2019.05.001

DO - 10.1016/j.sse.2019.05.001

M3 - Article

AN - SCOPUS:85065547733

SN - 0038-1101

VL - 158

SP - 11

EP - 15

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Abstract

Keywords

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