Abstract
This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.
Original language | English |
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Pages (from-to) | 11-15 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 158 |
DOIs | |
Publication status | Published - Aug 2019 |
Externally published | Yes |
Keywords
- InAs
- MOSFET simulation
- XOI transistor
- RF/DC simulation