DC and RF performances of InAs FinFET and GAA MOSFET on insulator

Qi Cheng, Kazy Shariar, Sourabh Khandelwal, Yuping Zeng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This paper presents a benchmarking comparison between InAs FinFET and gate-all-around (GAA)MOSFET by a 3-D TCAD simulation. The complete FinFET fabrication process is demonstrated followed by a TCAD simulation platform based on the experimental data. Both DC and RF simulation results are shown here. Further optimizations are explored for InAs FinFET/GAA MOSFET through TCAD simulations. It is found that with optimizations in materials, device geometry and fabrication, significant enhancement in DC/RF performances is possible with these devices. In addition, GAA MOSFET shows a better potential for future RF application.

Original languageEnglish
Pages (from-to)11-15
Number of pages5
JournalSolid-State Electronics
Volume158
DOIs
Publication statusPublished - Aug 2019
Externally publishedYes

Keywords

  • InAs
  • MOSFET simulation
  • XOI transistor
  • RF/DC simulation

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