@inproceedings{8ce6d2706caf4df68d48b0994350b5ca,
title = "Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs",
abstract = "AM/PM non-linearity of GaN HEMTs is analyzed with the help of physics-based industry standard ASM-HEMT model. A commercial GaN HEMT device is modeled with ASM-HEMT model. Accurate large signal non-linear model is obtained. Next this calibrated model is used to analyze the AM/PM non-linearity. It is found that the non-linear source field-plate capacitance in GaN HEMTs has a large impact on its AM/PM behavior. This is due to the large drain-source Vds voltage swing at high output powers. Large Vds swings from few volts to above 100 V modulates the charge in source field-plate region. This causes capacitance due to the source field-plate to be highly nonlinear' in-turn affecting the AM/PM behavior of the device.",
keywords = "AM/PM, Compact models, Gallium Nitride, Non-linear models, power amplifiers",
author = "Sourabh Khandelwal and Petra Hammes and Marek Schmidt-Szalowski and Amit Dikshit and Menno Clerk",
year = "2020",
doi = "10.1109/BCICTS48439.2020.9392962",
language = "English",
series = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1--4",
booktitle = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020",
address = "United States",
note = "2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 ; Conference date: 16-11-2020 Through 19-11-2020",
}