Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs

Sourabh Khandelwal*, Petra Hammes, Marek Schmidt-Szalowski, Amit Dikshit, Menno Clerk

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

AM/PM non-linearity of GaN HEMTs is analyzed with the help of physics-based industry standard ASM-HEMT model. A commercial GaN HEMT device is modeled with ASM-HEMT model. Accurate large signal non-linear model is obtained. Next this calibrated model is used to analyze the AM/PM non-linearity. It is found that the non-linear source field-plate capacitance in GaN HEMTs has a large impact on its AM/PM behavior. This is due to the large drain-source Vds voltage swing at high output powers. Large Vds swings from few volts to above 100 V modulates the charge in source field-plate region. This causes capacitance due to the source field-plate to be highly nonlinear' in-turn affecting the AM/PM behavior of the device.

Original languageEnglish
Title of host publication2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781728197494, 9781728197500
DOIs
Publication statusPublished - 2020
Externally publishedYes
Event2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020 - Monterey, United States
Duration: 16 Nov 202019 Nov 2020

Publication series

Name2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020

Conference

Conference2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020
CountryUnited States
CityMonterey
Period16/11/2019/11/20

Keywords

  • AM/PM
  • Compact models
  • Gallium Nitride
  • Non-linear models
  • power amplifiers

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