Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

S. Khandelwal, S. Ghosh, S. A. Ahsan, Y. S. Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.

Original languageEnglish
Title of host publicationProceedings of 2017 Asia Pacific Microwave Conference
EditorsIdnin Pasya, Fauziahanim Che Seman
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1134-1137
Number of pages4
ISBN (Electronic)9781538606407, 9781538606391
ISBN (Print)9781538606414
DOIs
Publication statusPublished - 2017
Event2017 IEEE Asia Pacific Microwave Conference, APMC 2017 - Kuala Lumpur, Malaysia
Duration: 13 Nov 201716 Nov 2017

Conference

Conference2017 IEEE Asia Pacific Microwave Conference, APMC 2017
CountryMalaysia
CityKuala Lumpur
Period13/11/1716/11/17

Keywords

  • GaN HEMTs
  • Non-linear behavior
  • GaN HEMT device design
  • GaN HEMT models

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