Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

S. Khandelwal; S. Ghosh; S. A. Ahsan; Y. S. Chauhan

doi:10.1109/APMC.2017.8251656

Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

S. Khandelwal, S. Ghosh, S. A. Ahsan, Y. S. Chauhan

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.

Original language	English
Title of host publication	Proceedings of 2017 Asia Pacific Microwave Conference
Editors	Idnin Pasya, Fauziahanim Che Seman
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1134-1137
Number of pages	4
ISBN (Electronic)	9781538606407, 9781538606391
ISBN (Print)	9781538606414
DOIs	https://doi.org/10.1109/APMC.2017.8251656
Publication status	Published - 2017
Event	2017 IEEE Asia Pacific Microwave Conference, APMC 2017 - Kuala Lumpur, Malaysia Duration: 13 Nov 2017 → 16 Nov 2017

Conference

Conference	2017 IEEE Asia Pacific Microwave Conference, APMC 2017
Country/Territory	Malaysia
City	Kuala Lumpur
Period	13/11/17 → 16/11/17

Keywords

GaN HEMTs
Non-linear behavior
GaN HEMT device design
GaN HEMT models

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10.1109/APMC.2017.8251656

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title = "Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness",

abstract = "In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.",

keywords = "GaN HEMTs, Non-linear behavior, GaN HEMT device design, GaN HEMT models",

author = "S. Khandelwal and S. Ghosh and Ahsan, {S. A.} and Chauhan, {Y. S.}",

year = "2017",

doi = "10.1109/APMC.2017.8251656",

language = "English",

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pages = "1134--1137",

editor = "Idnin Pasya and {Che Seman}, Fauziahanim",

booktitle = "Proceedings of 2017 Asia Pacific Microwave Conference",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2017 IEEE Asia Pacific Microwave Conference, APMC 2017 ; Conference date: 13-11-2017 Through 16-11-2017",

}

Khandelwal, S, Ghosh, S, Ahsan, SA & Chauhan, YS 2017, Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness. in I Pasya & F Che Seman (eds), Proceedings of 2017 Asia Pacific Microwave Conference. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1134-1137, 2017 IEEE Asia Pacific Microwave Conference, APMC 2017, Kuala Lumpur, Malaysia, 13/11/17. https://doi.org/10.1109/APMC.2017.8251656

Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness. / Khandelwal, S.; Ghosh, S.; Ahsan, S. A. et al.
Proceedings of 2017 Asia Pacific Microwave Conference. ed. / Idnin Pasya; Fauziahanim Che Seman. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 1134-1137.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Khandelwal, S.

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AU - Ahsan, S. A.

AU - Chauhan, Y. S.

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N2 - In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.

AB - In this paper we present the dependence of Gallium nitride (GaN) high electron mobility transistor (HEMT) AM/AM and AM/PM non-linearities on AlGaN barrier layer thickness (Tbar). While the effect of barrier layer thickness on two-dimensional electron gas density has been shown earlier, in this paper we show for the first time that Tbar affects the non-linear behavior of the device through the changes in channel effective mobility and capacitances. We accurately model five different GaN HEMT devices with Tbar varying from 8 nm to 25 nm using a physics-based model and use the developed accurate model as a tool to analyze the non-linear behavior of the GaN HEMT device.

KW - GaN HEMTs

KW - Non-linear behavior

KW - GaN HEMT device design

KW - GaN HEMT models

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ER -

Dependence of GaN HEMT AM/AM and AM/PM non-linearity on AlGaN barrier layer thickness

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