DESIGN AND PERFORMANCE OF LOCALLY FABRICATED GaAs DIGITAL ICs.

D. J. Skellern*, A. E. Parker, S. Mahon, J. W. Archer, G. Griffiths, C. J. Smith

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

An Australian project to design and fabricate high-speed gallium arsenide digital integrated circuits is reported. The first circuits are based on a depletion mode MESFET technology and will use high quality material grown by molecular beam epitaxy. Transistor gate widths are initially 2 micrometres with 1 micrometre spacing to allow use of local mask-making facilities. This paper outlines the technology used, discusses design techniques and constraints imposed by that technology, and gives performance estimates for fabricated circuits. The work is targeted primarily at communications applications.

Original languageEnglish
Title of host publicationNational Conference Publication - Institution of Engineers, Australia
PublisherInst of Engineers
Pages144-147
Number of pages4
ISBN (Print)0858253461
Publication statusPublished - 1987
Externally publishedYes

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Skellern, D. J., Parker, A. E., Mahon, S., Archer, J. W., Griffiths, G., & Smith, C. J. (1987). DESIGN AND PERFORMANCE OF LOCALLY FABRICATED GaAs DIGITAL ICs. In National Conference Publication - Institution of Engineers, Australia (pp. 144-147). Inst of Engineers.