An Australian project to design and fabricate high-speed gallium arsenide digital integrated circuits is reported. The first circuits are based on a depletion mode MESFET technology and will use high quality material grown by molecular beam epitaxy. Transistor gate widths are initially 2 micrometres with 1 micrometre spacing to allow use of local mask-making facilities. This paper outlines the technology used, discusses design techniques and constraints imposed by that technology, and gives performance estimates for fabricated circuits. The work is targeted primarily at communications applications.
|Title of host publication||National Conference Publication - Institution of Engineers, Australia|
|Publisher||Inst of Engineers|
|Number of pages||4|
|Publication status||Published - 1987|