Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions

M. Wintrebert-Fouquet*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)
5 Downloads (Pure)

Abstract

An InP/In0.53Ga0.47As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An InP/In0.53Ga0.47As resonant tunnelling diode which achieves a current density of 15 kA/cm2 at a peak voltage of 1,6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunction InGaAs/InP bipolar transistor. Results are presented for 3 μm × 3 μm emitter size integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 μA base current is observed in the common-emitter current-voltage characteristics at room temperature with a current density of 9.2 kA/cm2 and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a bistability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.

Original languageEnglish
Title of host publicationProceedings of the 2002 conference on optoelectronic and microelectronic materials and devices
EditorsMichael Gal
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages499-502
Number of pages4
Volume2002-January
ISBN (Electronic)0780375718
ISBN (Print)0780375718
DOIs
Publication statusPublished - 2003
EventConference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002) - Sydney
Duration: 11 Dec 200213 Dec 2002

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002)
CitySydney
Period11/12/0213/12/02

Bibliographical note

Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Keywords

  • III-V semiconductors
  • aluminium compounds
  • gallium arsenide
  • heterojunction bipolar transistors
  • indium compounds
  • molecular beam epitaxial growth
  • resonant tunnelling diodes
  • resonant tunnelling transistors
  • semiconductor epitaxial layers
  • semiconductor growth

Fingerprint

Dive into the research topics of 'Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions'. Together they form a unique fingerprint.

Cite this