Design, fabrication and characterisation of an InP resonant tunnelling bipolar transistor with double heterojuntions

M. Wintrebert-Fouquet*

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    1 Citation (Scopus)
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    Abstract

    An InP/In0.53Ga0.47As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An InP/In0.53Ga0.47As resonant tunnelling diode which achieves a current density of 15 kA/cm2 at a peak voltage of 1,6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunction InGaAs/InP bipolar transistor. Results are presented for 3 μm × 3 μm emitter size integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 μA base current is observed in the common-emitter current-voltage characteristics at room temperature with a current density of 9.2 kA/cm2 and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a bistability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.

    Original languageEnglish
    Title of host publicationProceedings of the 2002 conference on optoelectronic and microelectronic materials and devices
    EditorsMichael Gal
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages499-502
    Number of pages4
    Volume2002-January
    ISBN (Electronic)0780375718
    ISBN (Print)0780375718
    DOIs
    Publication statusPublished - 2003
    EventConference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002) - Sydney
    Duration: 11 Dec 200213 Dec 2002

    Conference

    ConferenceConference on Optoelectronic and Microelectronic Materials and Devices (COMMAND 2002)
    CitySydney
    Period11/12/0213/12/02

    Bibliographical note

    Copyright 2003 IEEE. Reprinted from Proceedings of the 2002 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

    Keywords

    • III-V semiconductors
    • aluminium compounds
    • gallium arsenide
    • heterojunction bipolar transistors
    • indium compounds
    • molecular beam epitaxial growth
    • resonant tunnelling diodes
    • resonant tunnelling transistors
    • semiconductor epitaxial layers
    • semiconductor growth

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