Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode

C. S. Y. Leung; David Skellern

doi:10.1109/COMMAD.1996.610123

Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode

C. S. Y. Leung, David Skellern

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

We have designed and fabricated In _0.53Ga _0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 ⁴ A/cm ² and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.

Original language	English
Title of host publication	Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	263-266
Number of pages	4
ISBN (Print)	0780333748
DOIs	https://doi.org/10.1109/COMMAD.1996.610123
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

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10.1109/COMMAD.1996.610123

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@inproceedings{49881fdae52a47a3adc3711f97e7543c,

title = "Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode",

abstract = "We have designed and fabricated In 0.53Ga 0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 4 A/cm 2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.",

author = "Leung, {C. S. Y.} and David Skellern",

year = "1996",

doi = "10.1109/COMMAD.1996.610123",

language = "English",

isbn = "0780333748",

pages = "263--266",

booktitle = "Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Leung, CSY & Skellern, D 1996, Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode. in Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 263-266, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610123

Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode. / Leung, C. S. Y.; Skellern, David.

Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 263-266.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode

AU - Leung, C. S. Y.

AU - Skellern, David

PY - 1996

Y1 - 1996

N2 - We have designed and fabricated In 0.53Ga 0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 4 A/cm 2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.

AB - We have designed and fabricated In 0.53Ga 0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 4 A/cm 2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.

UR - http://www.scopus.com/inward/record.url?scp=0030360269&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.1996.610123

DO - 10.1109/COMMAD.1996.610123

M3 - Conference proceeding contribution

AN - SCOPUS:0030360269

SN - 0780333748

SP - 263

EP - 266

BT - Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode

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