Abstract
We have designed and fabricated In 0.53Ga 0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 4 A/cm 2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.
Original language | English |
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Title of host publication | Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 263-266 |
Number of pages | 4 |
ISBN (Print) | 0780333748 |
DOIs | |
Publication status | Published - 1996 |
Event | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996 |
Other
Other | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD |
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City | Canberra, Aust |
Period | 8/12/96 → 11/12/96 |