Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode

C. S. Y. Leung, David Skellern

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

    1 Citation (Scopus)

    Abstract

    We have designed and fabricated In 0.53Ga 0.47As/AlAs resonant tunnelling diodes on InP substrate. At room temperature, the devices exhibit two negative differential resistance regions at 0.13 V and 0.65 V respectively in their dc I-V characteristic curves. The second resonant peak has a current density of 3.0×10 4 A/cm 2 and a peak-to-valley-ratio of 2:1. The measured tunnelling current and peak resonant voltages agree well with the theoretical calculations from a coherent tunnelling model. When the excess current is simulated by the intervalley scattering of electrons, the resultant I-V curve matches very well with the experimental result.

    Original languageEnglish
    Title of host publicationConference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD
    Place of PublicationPiscataway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages263-266
    Number of pages4
    ISBN (Print)0780333748
    DOIs
    Publication statusPublished - 1996
    EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
    Duration: 8 Dec 199611 Dec 1996

    Other

    OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
    CityCanberra, Aust
    Period8/12/9611/12/96

    Fingerprint Dive into the research topics of 'Design, fabrication and modelling of InGaAs/AlAs/InP resonant tunneling diode'. Together they form a unique fingerprint.

    Cite this